Abstract
GaN-based light emitting diodes (LEDs) have been grown by metalorganic chemical vapor deposition on Si(111) substrate with and without 3C-SiC intermediate layer (IL). Structural property has been characterized by means of atomic force microscope, X-ray diffraction, and transmission electron microscope measurements. It has been revealed that a significant improvement in crystalline quality of GaN and superlattice epitaxial layers can be achieved by using 3C-SiC as IL. Regarding of electrical and optical characteristics, it is clearly observed that the LEDs with its IL have a smaller leakage current and higher light output power comparing with the LEDs without IL. The better performance of LEDs using 3C-SiC IL can be contributed to both of the improvements in epitaxial layers quality and light extraction efficiency. As a consequence, in terms of optical property, a double enhancement of the light output power and external quantum efficiency has been realized.
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Zhu, Y., Wang, M., Li, Y. et al. Effect of 3C-SiC intermediate layer in GaN—based light emitting diodes grown on Si(111) substrate. Electron. Mater. Lett. 13, 142–146 (2017). https://doi.org/10.1007/s13391-017-6124-7
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DOI: https://doi.org/10.1007/s13391-017-6124-7