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Mn doping effect on the ferroelectric domain structure of BaTiO3 thin films

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Abstract

We comparatively investigated the ferroelectric domain structure of BaTiO3 (BTO) and Mn-doped BTO epitaxial thin films grown on Pt/MgO substrates by pulsed laser deposition. The advantages of Mn doping included enhanced ferroelectric polarization, low leakage current, and ferromagnetism. Piezoresponse force microscopy revealed that the increased domain wall energy associated with Mn doping led to an increase in the ferroelectric domain structure.

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Authors and Affiliations

  1. Department of Applied Physics, Kyung Hee University, Yongin, 446-701, Korea

    Yoonho Ahn, Jeongdae Seo & Jong Yeog Son

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  1. Yoonho Ahn
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  2. Jeongdae Seo
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  3. Jong Yeog Son
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Correspondence to Yoonho Ahn or Jong Yeog Son.

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Ahn, Y., Seo, J. & Son, J.Y. Mn doping effect on the ferroelectric domain structure of BaTiO3 thin films. Electron. Mater. Lett. 11, 232–235 (2015). https://doi.org/10.1007/s13391-014-4266-4

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  • DOI: https://doi.org/10.1007/s13391-014-4266-4

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