Abstract
The electron field emission from Si tips coated with ultrathin nanocomposite SiO2(Si) films containing Si nanocrystals embedded into silicon dioxide matrix of varying thickness have been investigated. The peaks in emission current–voltage characteristics have been observed in case of some definite thicknesses of the films. The observed experimental results have been explained on base of resonance tunneling through multilayer structure containing SiO2 sublayer from one (inner) side and SiO2 sublayer + vacuum from outer side as the barriers and Si nanocrystals as the quantum well. The fitting of theoretical modeling to experimental results allowed to clarify some details of the nanostructure.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Anwar AFM, Jahan MM (2004) Resonant tunneling devices. In: Nalwa HS (ed) Encyclopedia of nanoscience and nanotechnology, 9th edn., pp 357–370
Au FCK, Wong KW, Tang YH et al (1999) Electron field emission from Si nanowires. Appl Phys Lett 75:1700–1702. https://doi.org/10.1063/1.124794
Bukowski TJ, Simmons JH (2002) Quantum dot research: current state and future prospects. Crit Rev Solid State Mater Sci 27:119–142. https://doi.org/10.1080/10408430208500496
Buot FA, Zhao P, Cui HL, Woolard DL, Jensen KL, Krowne CM (2000) Emitter quantization and double hysteresis in resonant-tunneling structures: a nonlinear model of charge oscillation and current bistability. Phys Rev B 61:5644–5665. https://doi.org/10.1103/PhysRevB.61.5644
Chang LL, Esaki L, Tsu R (1974) Resonant tunneling in semiconductor double barriers. Appl Phys Lett 24:593–595. https://doi.org/10.1063/1.1655067
Evtukh A, Grygoriev A, Litovchenko V, Steblova O, Yilmazoglu O, Hartnagel HL, Mimura H (2014) Influence of the emitted electron energy distribution from nanocathodes upon the current–voltage characteristics. J Vac Sci Technol B 32:02B104. https://doi.org/10.1116/1.4843715
Evtukh A, Hartnagel H, Yilnazoglu O, Mimura H, Palvidis D (2015) Vaccum nanoelectronic devices: novel electron sources and applications. Wiley, Hoboken, p 453
Garcia Salgado G, Diaz T, Coyopol A, Rosendo E, Juarez H, Carrillo J, Oliva A (2009) Effect of annealing in atomic hydrogen or nitrogen atmospheres on SiOx nanoclusters obtained by HFCVD. J Nano Res 5:105–111. https://doi.org/10.4028/www.scientific.net/JNanoR.5.105
Gavrylyuk OO, Semchyk OYu, Steblova OV, Evtukh AA, Fedorenko LL, Bratus OL, Zlobin SO, Karlsteen M (2015) Influence of laser annealing on SiOx films properties. Appl Surf Sci 336:217–221. https://doi.org/10.1016/j.apsusc.2014.11.066
Janotta A, Dikce Y, Schmidt M, Eisele C, Stutzmann M (2004) Light-induced modification of a-SiOx II: laser crystallization. J Appl Phys 95:4060–4068. https://doi.org/10.1063/1.1667008
Kastner MA (1992) The single-electron transistor. Rev Mod Phys 64:849–858. https://doi.org/10.1103/RevModPhys.64.849
Kulkarni NN, Bac J, Shin CK et al (2005) Low-threshold field emission from cesiated Si NW. Appl Phys Lett 87:213115. https://doi.org/10.1063/1.2136217
Litovchenko VG, Evtukh AA, Litvin YuM, Goncharuk NM, Chayka VG (1999) Observation of the resonance tunneling in field emission structures. J Vac Sci Technol B17:655–658. https://doi.org/10.1116/1.590612
Litovchenko V, Evtukh A, Kryuchenko Yu, Goncharuk N, Hartnagel H, Yilmazoglu O, Mutamba C, Pavlidis D (2004) Quantum size resonance tunneling in the field emission phenomenon. J Appl Phys 96:867–877. https://doi.org/10.1063/1.1760234
Luryi S, Zaslavsky A (1998) Quantum-effect and hot-electron devices. In: Sze SM (ed) Modern semiconductor device physics. Wiley, New York, pp 253–341
Mimura H, Abe Y, Ikeda J, Tahara K, Neo Y, Shimawaki H, Yokoo K (1998) Resonant Fowler–Nordheim tunneling emission from metal-oxide-semiconductor cathodes. J Vac Sci Technol B 16:803–806. https://doi.org/10.1116/1.589909
Mizuta H, Tanoue T (1995) The physics and applications of resonant tunnelling diodes. Cambridge University Press, Cambridge, pp 213–217
Morris DP, Price PJ (1999) Resonant tunneling through a diode accumulation layer. J Appl Phys 85:2694–2698. https://doi.org/10.1063/1.369586
Qiu ZJ, Gui YS, Guo SL, Dai N, Chu JH, Zhang XX, Zeng YP (2004) Experimental verification on the origin of plateau-like current–voltage characteristics of resonant tunneling diodes. Appl Phys Lett 84:1961–1963. https://doi.org/10.1063/1.1682690
Sollner TCLG, Goodhue WD, Tannenwald PE, Parker CD, Peck DD (1983) Resonant tunneling through quantum wells at frequencies up to 2.5 THz. Appl Phys Lett 43:588–590. https://doi.org/10.1063/1.94434
Tang YH, Sun XH, Au FCK et al (2001) Microstructure and field emission characteristics of boron-doped Si nanoparticles chain. Appl Phys Lett 79:1673–1675. https://doi.org/10.1063/1.1396313
Tsu R, Esaki L (1973) Tunneling in a finite superlattice. Appl Phys Lett 22:62–564. https://doi.org/10.1063/1.1654509
Yu LW, Chen KJ, Song J, Wang JM, Xu J, Li W, Huang XF (2007) Coulomb blockade induced negative differential resistance effect in a self-assembly Si quantum dots array at room temperature. Thin Solid Films 515:5466–5470. https://doi.org/10.1016/j.tsf.2007.01.032
Zeng B, Xiong G, Chen S et al (2006) Field emission of Si nanowires. Appl Phys Lett 88:213108. https://doi.org/10.1063/1.2206151
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher’s Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Evtukh, A.A., Pylypova, O.V., Martyniuk, O. et al. Resonant tunneling at electron field emission from Si tips coated with SiO2(Si) films. Appl Nanosci 8, 931–935 (2018). https://doi.org/10.1007/s13204-018-0710-3
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s13204-018-0710-3