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Performance and Sensitivity Analysis of Polarity Controllable-Ion Sensitive FET for pH Sensing Applications

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Abstract

In the current work, Polarity controllable–Ion Sensitive FET (PC-ISFET) has been proposed that can work as a pH sensor in both n- and p- modes. The approach utilizes self-consistent solution of physics-based model and TCAD simulation. The surface charge density developed at the interface of electrolyte/sensing dielectric has been modeled using Gouy-Chapman-Stern model and Site-binding theory. The sensing efficacy of the proposed sensor has been exhaustively examined in terms of transfer characteristics and various sensitivity parameters such as shift in threshold voltage, drain current, ION / IOFF and transconductance have been critically assessed. Further, the sensing performance has also been analyzed for different high-κ dielectric materials such as HfO2 and Al2O3. It has been demonstrated that HfO2 performs better than Al2O3, although, both HfO2 and Al2O3 exhibit average threshold voltage sensitivity values of 98.47 (94.02) mV/ pH and 83.75 (87.75) mV/pH respectively for n- (p-) mode which is much higher than traditional Nernst limit i.e., 59 mV/pH.

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Acknowledgements

The authors (Priyanka Pandey) are thankful to the University Grants Commission, Government of India (3631/(NET-NOV (2017))) for providing necessary financial assistance during the course of research work. The authors also acknowledge Faculty Research Programme Grant – IoE (IoE/FRP/PCMS/2020/27).

Funding

The authors (Priyanka Pandey) are thankful to the University Grants Commission, Government of India (3631/(NET-NOV (2017))) for providing necessary financial assistance during the course of research work. The authors also acknowledge Faculty Research Programme Grant – IoE (IoE/FRP/PCMS/2020/27).

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  1. Department of Electronic Science, University of Delhi South Campus, New Delhi, India

    Priyanka Pandey & Harsupreet Kaur

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  1. Priyanka Pandey
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Pandey, P., Kaur, H. Performance and Sensitivity Analysis of Polarity Controllable-Ion Sensitive FET for pH Sensing Applications. Silicon 14, 8467–8474 (2022). https://doi.org/10.1007/s12633-022-01658-y

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