Skip to main content
Springer Nature Link
Log in

Space-confined vapor deposition synthesis of two dimensional materials

  • Review Article
  • Published:
Nano Research Aims and scope

Abstract

Two dimensional (2D) nanomaterials are promising fundamental building blocks for use in the next-generation semiconductor industry due to their unique geometry and excellent (opto)-electronic properties. However, large scale high quality fabrication of 2D nanomaterials remains challenging. Thus, the development of controllable fabrication methods for 2D materials is essential for their future practical application. In this review, we will discuss the importance of the space-confined vapor deposition strategy in the controllable fabrication of 2D materials and summarize recent progress in the utilization of this strategy for the synthesis of novel materials or structures. Using this method, various high quality ultrathin 2D materials, including large-area graphene and boron nitride, ReS2/ReSe2, HfS2, pyramid-structured multilayer MoS2, and the topological insulators Bi2Se3 and Bi2Te3, have been successfully obtained. Additionally, by utilizing van der Waals epitaxy growth substrates such as mica or other 2D materials, patterned growth of 2D nanomaterials can be easily achieved via a surface-induced growth mechanism. Finally, we provide a short prospect for future development of this strategy.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Subscribe and save

Springer+ Basic
$34.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or eBook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Tan, C. L.; Cao, X. H.; Wu, X.-J.; He, Q. Y.; Yang, J.; Zhang, X.; Chen, J. Z.; Zhao, W.; Han, S. K.; Nam, G.-H. et al. Recent advances in ultrathin two-dimensional nanomaterials. Chem. Rev. 2017, 117, 6225–6331.

    Article  CAS  Google Scholar 

  2. Geim, A. K.; Novoselov, K. S. The rise of graphene. Nat. Mater. 2007, 6, 183–191.

    Article  CAS  Google Scholar 

  3. Lee, C. G.; Wei, X. D.; Kysar, J. W.; Hone, J. Measurement of the elastic properties and intrinsic strength of monolayer graphene. Science 2008, 321, 385–388.

    Article  CAS  Google Scholar 

  4. Nair, R. R.; Blake, P.; Grigorenko, A. N.; Novoselov, K. S.; Booth, T. J.; Stauber, T.; Peres, N. M. R.; Geim, A. K. Fine structure constant defines visual transparency of graphene. Science 2008, 320, 1308–1308.

    Article  CAS  Google Scholar 

  5. Xu, M. S.; Liang, T.; Shi, M. M.; Chen, H. Z. Graphene-like two-dimensional materials. Chem. Rev. 2013, 113, 3766–3798.

    Article  CAS  Google Scholar 

  6. Gupta, A.; Sakthivel, T.; Seal, S. Recent development in 2D materials beyond graphene. Prog. Mater. Sci. 2015, 73, 44–126.

    Article  CAS  Google Scholar 

  7. Guo, Y. P.; Wei, Y. Q.; Li, H. Q.; Zhai, T. Y. Layer structured materials for advanced energy storage and conversion. Small 2017, 13, 1701649.

    Article  CAS  Google Scholar 

  8. Zhou, S. S.; Chen, J. N.; Gan, L.; Zhang, Q.; Zheng, Z.; Li, H. Q.; Zhai, T. Y. Scalable production of self-supported WS2/CNFs by electrospinning as the anode for highperformance lithium-ion batteries. Sci. Bull. 2016, 61, 227–235.

    Article  CAS  Google Scholar 

  9. Zhuge, F. W.; Zheng, Z.; Luo, P.; Lv, L.; Huang, Y.; Li, H. Q.; Zhai, T. Y. Nanostructured materials and architectures for advanced infrared photodetection. Adv. Mater. Technol. 2017, 2, 1700005.

    Article  CAS  Google Scholar 

  10. Gong, C. H.; Zhang, Y. X.; Chen, W.; Chu, J. W.; Lei, T. Y.; Pu, J. R.; Dai, L. P.; Wu, C. Y.; Cheng, Y. H.; Zhai, T. Y. et al. Electronic and optoelectronic applications based on 2D novel anisotropic transition metal dichalcogenides. Adv. Sci. 2017, 4, 1700231.

    Article  CAS  Google Scholar 

  11. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science 2004, 306, 666–669.

    Article  CAS  Google Scholar 

  12. Wan, X. F.; Zhou, N.; Gan, L.; Li, H. Q.; Ma, Y.; Zhai, T. Y. Towards wafer-size strictly monolayer graphene on copper via cyclic atmospheric chemical vapor deposition. Carbon 2016, 110, 384–389.

    Article  CAS  Google Scholar 

  13. Fiori, G.; Bonaccorso, F.; Iannaccone, G.; Palacios, T.; Neumaier, D.; Seabaugh, A.; Banerjee, S. K.; Colombo, L. Electronics based on two-dimensional materials. Nat. Nanotechnol. 2014, 9, 768–779.

    Article  CAS  Google Scholar 

  14. Ganatra, R.; Zhang, Q. Few-layer MoS2: A promising layered semiconductor. ACS Nano 2014, 8, 4074–4099.

    Article  CAS  Google Scholar 

  15. Lim, Y. R.; Song, W.; Han, J. K.; Lee, Y. B.; Kim, S. J.; Myung, S.; Lee, S. S.; An, K. S.; Choi, C. J.; Lim, J. Wafer-scale, homogeneous MoS2 layers on plastic substrates for flexible visible-light photodetectors. Adv. Mater. 2016, 28, 5025–5030.

    Article  CAS  Google Scholar 

  16. Li, L. K.; Yu, Y. J.; Ye, G. J.; Ge, Q. Q.; Ou, X. D.; Wu, H.; Feng, D. L.; Chen, X. H.; Zhang, Y. B. Black phosphorus field-effect transistors. Nat. Nanotechnol. 2014, 9, 372–377.

    Article  CAS  Google Scholar 

  17. Makinistian, L.; Albanesi, E. A. First-principles calculations of the band gap and optical properties of germanium sulfide. Phys. Rev. B 2006, 74, 045206.

    Article  CAS  Google Scholar 

  18. Zhang, E. Z.; Jin, Y. B.; Yuan, X.; Wang, W. Y.; Zhang, C.; Tang, L.; Liu, S. S.; Zhou, P.; Hu, W. D.; Xiu, F. X. ReS2- based field-effect transistors and photodetectors. Adv. Funct. Mater. 2015, 25, 4076–4082.

    Article  CAS  Google Scholar 

  19. Li, H.; Cao, J.; Zheng, W. S.; Chen, Y. L.; Wu, D.; Dang, W. H.; Wang, K.; Peng, H. L.; Liu, Z. F. Controlled synthesis of topological insulator nanoplate arrays on mica. J. Am. Chem. Soc. 2012, 134, 6132–6135.

    Article  CAS  Google Scholar 

  20. Li, L.; Wang, W. K.; Gan, L.; Zhou, N.; Zhu, X. D.; Zhang, Q.; Li, H. Q.; Tian, M. L.; Zhai, T. Y. Ternary Ta2NiSe5 flakes for a high-performance infrared photodetector. Adv. Funct. Mater. 2016, 26, 8281–8289.

    Article  CAS  Google Scholar 

  21. Wu, J. X.; Yuan, H. T.; Meng, M. M.; Chen, C.; Sun, Y.; Chen, Z. Y.; Dang, W. H.; Tan, C. W.; Liu, Y. J.; Yin, J. B. et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nat. Nanotechnol. 2017, 12, 530–534.

    Article  CAS  Google Scholar 

  22. Liu, Y. J.; Tang, M.; Meng, M. M.; Wang, M. Z.; Wu, J. X.; Yin, J. B.; Zhou, Y. B.; Guo, Y. F.; Tan, C. W.; Dang, W. H. et al. Epitaxial growth of ternary topological insulator Bi2Te2Se 2D crystals on mica. Small 2017, 13, 1603572.

    Article  CAS  Google Scholar 

  23. Zhuge, F. W.; Luo, P.; Zhai, T. Y. Lead-free perovskites for X-ray detecting. Sci. Bull. 2017, 62, 1491–1493.

    Article  CAS  Google Scholar 

  24. Wang, Y. G.; Gan, L.; Chen, J. N.; Yang, R.; Zhai, T. Y. Achieving highly uniform two-dimensional PbI2 flakes for photodetectors via space confined physical vapor deposition. Sci. Bull. 2017, in press, DOI: 10.1016/j.scib.2017.11.011.

    Google Scholar 

  25. Ciesielski, A.; Samorì, P. Graphene via sonication assisted liquid-phase exfoliation. Chem. Soc. Rev. 2014, 43, 381–398.

    Article  CAS  Google Scholar 

  26. Paton, K. R.; Varrla, E.; Backes, C.; Smith, R. J.; Khan, U.; O’Neill, A.; Boland, C.; Lotya, M.; Istrate, O. M.; King, P. et al. Scalable production of large quantities of defect-free few-layer graphene by shear exfoliation in liquids. Nat. Mater. 2014, 13, 624–630.

    Article  CAS  Google Scholar 

  27. Ji, Q. Q.; Zhang, Y.; Zhang, Y. F.; Liu, Z. F. Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: Engineered substrates from amorphous to single crystalline. Chem. Soc. Rev. 2015, 44, 2587–2602.

    Article  CAS  Google Scholar 

  28. Zheng, S. J.; Sun, L. F.; Yin, T. T.; Dubrovkin, A. M.; Liu, F. C.; Liu, Z.; Shen, Z. X.; Fan, H. J. Monolayers of WxMo1−xS2 alloy heterostructure with in-plane composition variations. Appl. Phys. Lett. 2015, 106, 063113.

    Article  CAS  Google Scholar 

  29. Liu, Z.; Ma, L. L.; Shi, G.; Zhou, W.; Gong, Y. J.; Lei, S. D.; Yang, X. B.; Zhang, J. N.; Yu, J. J.; Hackenberg, K. P. et al. In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes. Nat. Nanotechnol. 2013, 8, 119–124.

    Article  CAS  Google Scholar 

  30. Chiu, M.-H.; Zhang, C. D.; Shiu, H.-W.; Chuu, C.-P.; Chen, C.-H.; Chang, C.-Y. S.; Chen, C.-H.; Chou, M.-Y.; Shih, C.-K.; Li, L.-J. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction. Nat. Commun. 2015, 6, 7666.

    Article  CAS  Google Scholar 

  31. Yu, J. H.; Lee, H. R.; Hong, S. S.; Kong, D. S.; Lee, H. W.; Wang, H. T.; Xiong, F.; Wang, S.; Cui, Y. Vertical heterostructure of two-dimensional MoS2 and WSe2 with vertically aligned layers. Nano Lett. 2015, 15, 1031–1035.

    Article  CAS  Google Scholar 

  32. Chen, H. L.; Wen, X. W.; Zhang, J.; Wu, T. M.; Gong, Y. J.; Zhang, X.; Yuan, J. T.; Yi, C. Y.; Lou, J.; Ajayan, P. M. et al. Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures. Nat. Commun. 2016, 7, 12512.

    Article  CAS  Google Scholar 

  33. Chen, P.; Xiang, J. Y.; Yu, H.; Zhang, J.; Xie, G. B.; Wu, S.; Lu, X. B.; Wang, G. L.; Zhao, J.; Wen, F. S. et al. Gate tunable MoS2–black phosphorus heterojunction devices. 2D Mater. 2015, 2, 034009.

    Article  CAS  Google Scholar 

  34. He, Y. M.; Sobhani, A.; Lei, S. D.; Zhang, Z. H.; Gong, Y. J.; Jin, Z. H.; Zhou, W.; Yang, Y. C.; Zhang, Y.; Wang, X. F. et al. Layer engineering of 2D semiconductor junctions. Adv. Mater. 2016, 28, 5126–5132.

    Article  CAS  Google Scholar 

  35. Chen, K.; Wan, X.; Xu, J. B. Epitaxial stitching and stacking growth of atomically thin transition-metal dichalcogenides (TMDCs) heterojunctions. Adv. Funct. Mater. 2017, 27, 1603884.

    Article  CAS  Google Scholar 

  36. Wu, T. R.; Zhang, X. F.; Yuan, Q. H.; Xue, J. C.; Lu, G. Y.; Liu, Z. H.; Wang, H. S.; Wang, H. M.; Ding, F.; Yu, Q. K. et al. Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu-Ni alloys. Nat. Mater. 2016, 15, 43–47.

    Article  CAS  Google Scholar 

  37. Song, X. J.; Gao, J. F.; Nie, Y. F.; Gao, T.; Sun, J. Y.; Ma, D. L.; Li, Q. C.; Chen, Y. B.; Jin, C. H.; Bachmatiuk, A. et al. Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation. Nano Res. 2015, 8, 3164–3176.

    Article  CAS  Google Scholar 

  38. Mohapatra, P. K.; Deb, S.; Singh, B. P.; Vasa, P.; Dhar, S. Strictly monolayer large continuous MoS2 films on diverse substrates and their luminescence properties. Appl. Phys. Lett. 2016, 108, 042101.

    Article  CAS  Google Scholar 

  39. Zheng, J. Y.; Yan, X. X.; Lu, Z. X.; Qiu, H. L.; Xu, G. C.; Zhou, X.; Wang, P.; Pan, X. Q.; Liu, K. H.; Jiao, L. Y. High-mobility multilayered MoS2 flakes with low contact resistance grown by chemical vapor deposition. Adv. Mater. 2017, 29, 1604540.

    Article  CAS  Google Scholar 

  40. Li, X. B.; Cui, F. F.; Feng, Q. L.; Wang, G.; Xu, X. S.; Wu, J. X.; Mao, N. N.; Liang, X.; Zhang, Z. Y.; Zhang, J. et al. Controlled growth of large-area anisotropic ReS2 atomic layer and its photodetector application. Nanoscale 2016, 8, 18956–18962.

    Article  CAS  Google Scholar 

  41. Cui, F. F.; Li, X. B.; Feng, Q. L.; Yin, J. B.; Zhou, L.; Liu, D. Y.; Liu, K. Q.; He, X. X.; Liang, X.; Liu, S. Z. et al. Epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer. Nano Res. 2017, 10, 2732–2742.

    Article  CAS  Google Scholar 

  42. Lin, M.; Wu, D.; Zhou, Y.; Huang, W.; Jiang, W.; Zheng, W. S.; Zhao, S. L.; Jin, C. H.; Guo, Y. F.; Peng, H. L. et al. Controlled growth of atomically thin In2Se3 flakes by van der waals epitaxy. J. Am. Chem. Soc. 2013, 135, 13274–13277.

    Article  CAS  Google Scholar 

  43. Wu, J. X.; Tan, C. W.; Tan, Z. J.; Liu, Y. J.; Yin, J. B.; Dang, W. H.; Wang, M. Z.; Peng, H. L. Controlled synthesis of high-mobility atomically thin bismuth oxyselenide crystals. Nano Lett. 2017, 17, 3021–3026.

    Article  CAS  Google Scholar 

  44. Li, X. S.; Cai, W. W.; An, J.; Kim, S.; Nah, J.; Yang, D. X.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E. et al. Largearea synthesis of high-quality and uniform graphene films on copper foils. Science 2009, 324, 1312–1314.

    Article  CAS  Google Scholar 

  45. Bhaviripudi, S.; Jia, X. T.; Dresselhaus, M. S.; Kong, J. Role of kinetic factors in chemical vapor deposition synthesis of uniform large area graphene using copper catalyst. Nano Lett. 2010, 10, 4128–4133.

    Article  CAS  Google Scholar 

  46. Chen, C.-C.; Kuo, C.-J.; Liao, C.-D.; Chang, C.-F.; Tseng, C.-A.; Liu, C.-R.; Chen, Y.-T. Growth of large-area graphene single crystals in confined reaction space with diffusiondriven chemical vapor deposition. Chem. Mater. 2015, 27, 6249–6258.

    Article  CAS  Google Scholar 

  47. Zhang, Y.; Zhang, L. Y.; Kim, P.; Ge, M. Y.; Li, Z.; Zhou, C. W. Vapor trapping growth of single-crystalline graphene flowers: Synthesis, morphology, and electronic properties. Nano Lett. 2012, 12, 2810–2816.

    Article  CAS  Google Scholar 

  48. Li, X. S.; Magnuson, C. W.; Venugopal, A.; Tromp, R. M.; Hannon, J. B.; Vogel, E. M.; Colombo, L.; Ruoff, R. S. Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper. J. Am. Chem. Soc. 2011, 133, 2816–2819.

    Article  CAS  Google Scholar 

  49. Hao, Y. F.; Bharathi, M.; Wang, L.; Liu, Y. Y.; Chen, H.; Nie, S.; Wang, X. H.; Chou, H.; Tan, C.; Fallahazad, B. et al. The role of surface oxygen in the growth of large single-crystal graphene on copper. Science 2013, 342, 720–723.

    Article  CAS  Google Scholar 

  50. Chen, S. S.; Ji, H. X.; Chou, H.; Li, Q. Y.; Li, H. Y.; Suk, J. W.; Piner, R.; Liao, L.; Cai, W. W.; Ruoff, R. S. Millimeter-size single-crystal graphene by suppressing evaporative loss of Cu during low pressure chemical vapor deposition. Adv. Mater. 2013, 25, 2062–2065.

    Article  CAS  Google Scholar 

  51. Phan, H. D.; Jung, J.; Kim, Y.; Huynh, V. N.; Lee, C. Large-area single-crystal graphene grown on a recrystallized Cu(111) surface by using a hole-pocket method. Nanoscale 2016, 8, 13781–13789.

    Article  CAS  Google Scholar 

  52. Wood, J. D.; Schmucker, S. W.; Lyons, A. S.; Pop, E.; Lyding, J. W. Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition. Nano Lett. 2011, 11, 4547–4554.

    Article  CAS  Google Scholar 

  53. Wang, C. C.; Chen, W.; Han, C.; Wang, G.; Tang, B. B.; Tang, C. X.; Wang, Y.; Zou, W. N.; Zhang, X.-A.; Qin, S. Q. et al. Growth of millimeter-size single crystal graphene on Cu foils by circumfluence chemical vapor deposition. Sci. Rep. 2014, 4, 4537.

    Article  CAS  Google Scholar 

  54. Ding, D.; Solís-Fernández, P.; Hibino, H.; Ago, H. Spatially controlled nucleation of single-crystal graphene on Cu assisted by stacked Ni. ACS Nano 2016, 10, 11196–11204.

    Article  CAS  Google Scholar 

  55. Wu, T. R.; Ding, G. Q.; Shen, H. L.; Wang, H. M.; Sun, L.; Jiang, D.; Xie, X. M.; Jiang, M. H. Triggering the continuous growth of graphene toward millimeter-sized grains. Adv. Funct. Mater. 2013, 23, 198–203.

    Article  CAS  Google Scholar 

  56. Wang, H.; Wang, G. Z.; Bao, P. F.; Yang, S. L.; Zhu, W.; Xie, X.; Zhang, W.-J. Controllable synthesis of submillimeter single-crystal monolayer graphene domains on copper foils by suppressing nucleation. J. Am. Chem. Soc. 2012, 134, 3627–3630.

    Article  CAS  Google Scholar 

  57. Yan, Z.; Lin, J.; Peng, Z. W.; Sun, Z. Z.; Zhu, Y.; Li, L.; Xiang, C. S.; Samuel, E. L.; Kittrell, C.; Tour, J. M. Toward the synthesis of wafer-scale single-crystal graphene on copper foils. ACS Nano 2012, 6, 9110–9117.

    Article  CAS  Google Scholar 

  58. Yan, Z.; Liu, Y. Y.; Ju, L.; Peng, Z. W.; Lin, J.; Wang, G.; Zhou, H. Q.; Xiang, C. S.; Samuel, E. L. G.; Kittrell, C. et al. Large hexagonal bi- and trilayer graphene single crystals with varied interlayer rotations. Angew. Chem., Int. Ed. 2014, 53, 1565–1569.

    Article  CAS  Google Scholar 

  59. Somani, P. R.; Somani, S. P.; Umeno, M. Planer nanographenes from camphor by CVD. Chem. Phys. Lett. 2006, 430, 56–59.

    Article  CAS  Google Scholar 

  60. Pollard, A. J.; Nair, R. R.; Sabki, S. N.; Staddon, C. R.; Perdigao, L. M. A.; Hsu, C. H.; Garfitt, J. M.; Gangopadhyay, S.; Gleeson, H. F.; Geim, A. K. et al. Formation of monolayer graphene by annealing sacrificial nickel thin films. J. Phys. Chem. C. 2009, 113, 16565–16567.

    Article  CAS  Google Scholar 

  61. Fang, W. J.; Hsu, A. L.; Caudillo, R.; Song, Y.; Birdwell, A. G.; Zakar, E.; Kalbac, M.; Dubey, M.; Palacios, T.; Dresselhaus, M. S. et al. Rapid identification of stacking orientation in isotopically labeled chemical-vapor grown bilayer graphene by Raman spectroscopy. Nano Lett. 2013, 13, 1541–1548.

    Article  CAS  Google Scholar 

  62. Fang, W. J.; Hsu, A. L.; Song, Y.; Birdwell, A. G.; Amani, M.; Dubey, M.; Dresselhaus, M. S.; Palacios, T.; Kong, J. Asymmetric growth of bilayer graphene on copper enclosures using low-pressure chemical vapor deposition. ACS Nano 2014, 8, 6491–6499.

    Article  CAS  Google Scholar 

  63. Rümmeli, M. H.; Gorantla, S.; Bachmatiuk, A.; Phieler, J.; Geißler, N.; Ibrahim, I.; Pang, J. B.; Eckert, J. On the role of vapor trapping for chemical vapor deposition (CVD) grown graphene over copper. Chem. Mater. 2013, 25, 4861–4866.

    Article  CAS  Google Scholar 

  64. Song, Y. N.; Pan, D. Y.; Cheng, Y.; Wang, P.; Zhao, P.; Wang, H. T. Growth of large graphene single crystal inside a restricted chamber by chemical vapor deposition. Carbon 2015, 95, 1027–1032.

    Article  CAS  Google Scholar 

  65. Lv, R. T.; Robinson, J. A.; Schaak, R. E.; Sun, D.; Sun, Y. F.; Mallouk, T. E.; Terrones, M. Transition metal dichalcogenides and beyond: Synthesis, properties, and applications of singleand few-layer nanosheets. Acc. Chem. Res. 2015, 48, 56–64.

    Article  CAS  Google Scholar 

  66. Zhang, W. S.; Zhang, P. P.; Su, Z. Q.; Wei, G. Synthesis and sensor applications of MoS2-based nanocomposites. Nanoscale 2015, 7, 18364–18378.

    Article  CAS  Google Scholar 

  67. Laskar, M. R.; Ma, L.; Kannappan, S.; Park, P. S.; Krishnamoorthy, S.; Nath, D. N.; Lu, W.; Wu, Y. Y.; Rajan, S. Large area single crystal (0001) oriented MoS2. Appl. Phys. Lett. 2013, 102, 252108.

    Article  CAS  Google Scholar 

  68. Liu, K.-K.; Zhang, W. J.; Lee, Y.-H.; Lin, Y.-C.; Chang, M.-T.; Su, C.; Chang, C.-S.; Li, H.; Shi, Y. M.; Zhang, H. et al. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. Nano Lett. 2012, 12, 1538–1544.

    Article  CAS  Google Scholar 

  69. Fei, L. F.; Lei, S. J.; Zhang, W.-B.; Lu, W.; Lin, Z. Y.; Lam, C. H.; Chai, Y.; Wang, Y. Direct TEM observations of growth mechanisms of two-dimensional MoS2 flakes. Nat. Commun. 2016, 7, 12206.

    Article  CAS  Google Scholar 

  70. van der Zande, A. M.; Huang, P. Y.; Chenet, D. A.; Berkelbach, T. C.; You, Y. M.; Lee, G. H.; Heinz, T. F.; Reichman, D. R.; Muller, D. A.; Hone, J. C. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater. 2013, 12, 554–561.

    Article  CAS  Google Scholar 

  71. McCreary, K. M.; Hanbicki, A. T.; Robinson, J. T.; Cobas, E.; Culbertson, J. C.; Friedman, A. L.; Jernigan, G. G.; Jonker, B. T. Large-area synthesis of continuous and uniform MoS2 monolayer films on graphene. Adv. Funct. Mater. 2014, 24, 6449–6454.

    Article  CAS  Google Scholar 

  72. O’Brien, M.; McEvoy, N.; Hallam, T.; Kim, H. Y.; Berner, N. C.; Hanlon, D.; Lee, K.; Coleman, J. N.; Duesberg, G. S. Transition metal dichalcogenide growth via close proximity precursor supply. Sci. Rep. 2014, 4, 7374.

    Article  CAS  Google Scholar 

  73. Zhang, J.; Yu, H.; Chen, W.; Tian, X. Z.; Liu, D. H.; Cheng, M.; Xie, G. B.; Yang, W.; Yang, R.; Bai, X. D. et al. Scalable growth of high-quality polycrystalline MoS2 monolayers on SiO2 with tunable grain sizes. ACS Nano 2014, 8, 6024–6030.

    Article  CAS  Google Scholar 

  74. Li, X. S.; Magnuson, C. W.; Venugopal, A.; An, J. H.; Suk, J. W.; Han, B. Y.; Borysiak, M.; Cai, W. W.; Velamakanni, A.; Zhu, Y. W. et al. Graphene films with large domain size by a two-step chemical vapor deposition process. Nano Lett. 2010, 10, 4328–4334.

    Article  CAS  Google Scholar 

  75. Tu, Z. Y.; Li, G. D.; Ni, X.; Meng, L. X.; Bai, S.; Chen, X. B.; Lou, J. J.; Qin, Y. Synthesis of large monolayer single crystal MoS2 nanosheets with uniform size through a double-tube technology. Appl. Phys. Lett. 2016, 109, 223101.

    Article  CAS  Google Scholar 

  76. Lin, Z. Y.; Zhao, Y. D.; Zhou, C. J.; Zhong, R.; Wang, X. S.; Tsang, Y. H.; Chai, Y. Controllable growth of large-size crystalline MoS2 and resist-free transfer assisted with a Cu thin film. Sci. Rep. 2015, 5, 18596.

    Article  CAS  Google Scholar 

  77. Kang, K.; Xie, S. E.; Huang, L. J.; Han, Y. M.; Huang, P. Y.; Mak, K. F.; Kim, C. J.; Muller, D.; Park, J. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 2015, 520, 656–660.

    Article  CAS  Google Scholar 

  78. Han, G. H.; Kybert, N. J.; Naylor, C. H.; Lee, B. S.; Ping, J. L.; Park, J. H.; Kang, J.; Lee, S. Y.; Lee, Y. H.; Agarwal, R. et al. Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations. Nat. Commun. 2015, 6, 6128.

    Article  CAS  Google Scholar 

  79. Wang, X. S.; Feng, H. B.; Wu, Y. M.; Jiao, L. Y. Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition. J. Am. Chem. Soc. 2013, 135, 5304–5307.

    Article  CAS  Google Scholar 

  80. Kim, S.; Konar, A.; Hwang, W. S.; Lee, J. H.; Lee, J.; Yang, J.; Jung, C.; Kim, H.; Yoo, J. B.; Choi, J. Y. et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat. Commun. 2012, 3, 1011.

    Article  CAS  Google Scholar 

  81. Liu, X. C.; Qu, D. S.; Ryu, J.; Ahmed, F.; Yang, Z.; Lee, D.; Yoo, W. J. P-type polar transition of chemically doped multilayer MoS2 transistor. Adv. Mater. 2016, 28, 2345–2351.

    Article  CAS  Google Scholar 

  82. Zhang, W. X.; Huang, Z. S.; Zhang, W. L.; Li, Y. R. Twodimensional semiconductors with possible high room temperature mobility. Nano Res. 2014, 7, 1731–1737.

    Article  CAS  Google Scholar 

  83. Yan, C. Y.; Gan, L.; Zhou, X.; Guo, J.; Huang, W. J.; Huang, J. W.; Jin, B.; Xiong, J.; Zhai, T. Y.; Li, Y. R. Spaceconfined chemical vapor deposition synthesis of ultrathin HfS2 flakes for optoelectronic application. Adv. Funct. Mater. 2017, 27, 1702918.

    Article  CAS  Google Scholar 

  84. Zheng, B. J.; Chen, Y. F.; Wang, Z. G.; Qi, F.; Huang, Z. S.; Hao, X.; Li, P. J.; Zhang, W. L.; Li, Y. R. Vertically oriented few-layered HfS2 nanosheets: Growth mechanism and optical properties. 2D Mater. 2016, 3, 035024.

    Article  CAS  Google Scholar 

  85. Zhou, Z. P.; Ci, L. J.; Song, L.; Yan, X. Q.; Liu, D. F.; Yuan, H. J.; Gao, Y.; Wang, J. X.; Liu, L. F.; Zhou, W. Y. et al. Random networks of single-walled carbon nanotubes. J. Phys. Chem. B 2004, 108, 10751–10753.

    Article  CAS  Google Scholar 

  86. Chenet, D. A.; Aslan, O. B.; Huang, P. Y.; Fan, C.; van der Zande, A. M.; Heinz, T. F.; Hone, J. C. In-plane anisotropy in mono- and few-layer ReS2 probed by Raman spectroscopy and scanning transmission electron microscopy. Nano Lett. 2015, 15, 5667–5672.

    Article  CAS  Google Scholar 

  87. He, R.; Yan, J.-A.; Yin, Z. Y.; Ye, Z. P.; Ye, G. H.; Cheng, J.; Li, J.; Lui, C. H. Coupling and stacking order of ReS2 atomic layers revealed by ultralow-frequency Raman spectroscopy. Nano Lett. 2016, 16, 1404–1409.

    Article  CAS  Google Scholar 

  88. Yang, S. X.; Cong, W.; Sahin, H.; Chen, H.; Li, Y.; Li, S. S.; Suslu, A.; Peeters, F. M.; Liu, Q.; Li, J. B. et al. Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering. Nano Lett. 2015, 15, 1660–1666.

    Article  CAS  Google Scholar 

  89. Hafeez, M.; Gan, L.; Saleem Bhatti, A.; Zhai, T. Y. Rhenium dichalcogenides (ReX2, X = S or Se): An emerging class of TMDs family. Mater. Chem. Front. 2017, 1, 1917–1932.

    Article  CAS  Google Scholar 

  90. Liu, F. C.; Zheng, S. J.; He, X. X.; Chaturvedi, A.; He, J. F.; Chow, W. L.; Mion, T. R.; Wang, X. L.; Zhou, J. D.; Fu, Q. D. et al. Highly sensitive detection of polarized light using anisotropic 2D ReS2. Adv. Funct. Mater. 2016, 26, 1169–1177.

    Article  CAS  Google Scholar 

  91. Lorchat, E.; Froehlicher, G.; Berciaud, S. Splitting of interlayer shear modes and photon energy dependent anisotropic Raman response in n-layer ReSe2 and ReS2. ACS Nano 2016, 10, 2752–2760.

    Article  CAS  Google Scholar 

  92. McCreary, A.; Simpson, J. R.; Wang, Y. X.; Rhodes, D.; Fujisawa, K.; Balicas, L.; Dubey, M.; Crespi, V. H.; Terrones, M.; Hight Walker, A. R. Intricate resonant Raman response in anisotropic ReS2. Nano Lett. 2017, 17, 5897–5907.

    Article  CAS  Google Scholar 

  93. Keyshar, K.; Gong, Y. J.; Ye, G. L.; Brunetto, G.; Zhou, W.; Cole, D. P.; Hackenberg, K.; He, Y. M.; Machado, L.; Kabbani, M. et al. Chemical vapor deposition of monolayer rhenium disulfide (ReS2). Adv. Mater. 2015, 27, 4640–4648.

    Article  CAS  Google Scholar 

  94. He, X. X.; Liu, F. C.; Hu, P.; Fu, W.; Wang, X. L.; Zeng, Q. S.; Zhao, W.; Liu, Z. Chemical vapor deposition of high-quality and atomically layered ReS2. Small 2015, 11, 5423–5429.

    Article  CAS  Google Scholar 

  95. Huang, W. J.; Gan, L.; Yang, H. T.; Zhou, N.; Wang, R. Y.; Wu, W. H.; Li, H. Q.; Ma, Y.; Zeng, H. B.; Zhai, T. Y. Controlled synthesis of ultrathin 2D β-In2S3 with broadband photoresponse by chemical vapor deposition. Adv. Funct. Mater. 2017, 27, 1702448.

    Article  CAS  Google Scholar 

  96. Hao, Y. F.; Meng, G. W.; Ye, C. H.; Zhang, X. R.; Zhang, L. D. Kinetics-driven growth of orthogonally branched single-crystalline magnesium oxide nanostructures. J. Phys. Chem. B 2005, 109, 11204–11208.

    Article  CAS  Google Scholar 

  97. Zhou, Y. B.; Nie, Y. F.; Liu, Y. J.; Yan, K.; Hong, J. H.; Jin, C. H.; Zhou, Y.; Yin, J. B.; Liu, Z. F.; Peng, H. L. Epitaxy and photoresponse of two-dimensional GaSe crystals on flexible transparent mica sheets. ACS Nano 2014, 8, 1485–1490.

    Article  CAS  Google Scholar 

  98. Zheng, W. S.; Xie, T.; Zhou, Y.; Chen, Y. L.; Jiang, W.; Zhao, S. L.; Wu, J. X.; Jing, Y. M.; Wu, Y.; Chen, G. C. et al. Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors. Nat. Commun. 2015, 6, 6972.

    Article  CAS  Google Scholar 

  99. Koma, A. Van der Waals epitaxy—A new epitaxial growth method for a highly lattice-mismatched system. Thin Solid Films 1992, 216, 72–76.

    Article  CAS  Google Scholar 

  100. Wang, Q. S.; Safdar, M.; Xu, K.; Mirza, M.; Wang, Z. X.; He, J. Van der Waals epitaxy and photoresponse of hexagonal tellurium nanoplates on flexible mica sheets. ACS Nano 2014, 8, 7497–7505.

    Article  CAS  Google Scholar 

  101. Wang, Q. S.; Xu, K.; Wang, Z. X.; Wang, F.; Huang, Y.; Safdar, M.; Zhan, X. Y.; Wang, F. M.; Cheng, Z. Z.; He, J. Van der Waals epitaxial ultrathin two-dimensional nonlayered semiconductor for highly efficient flexible optoelectronic devices. Nano Lett. 2015, 15, 1183–1189.

    Article  CAS  Google Scholar 

  102. Wang, F.; Wang, Z. X.; Shifa, T. A.; Wen, Y.; Wang, F. M.; Zhan, X. Y.; Wang, Q. S.; Xu, K.; Huang, Y.; Yin, L. et al. Two-dimensional non-layered materials: Synthesis, properties and applications. Adv. Funct. Mater. 2017, 27, 1603254.

    Article  CAS  Google Scholar 

  103. Ling, X.; Lin, Y. X.; Ma, Q.; Wang, Z. Q.; Song, Y.; Yu, L. L.; Huang, S. X.; Fang, W. J.; Zhang, X.; Hsu, A. L. et al. Parallel stitching of 2D materials. Adv. Mater. 2016, 28, 2322–2329.

    Article  CAS  Google Scholar 

  104. Gong, Y. J.; Lin, J. H.; Wang, X. L.; Shi, G.; Lei, S. D.; Lin, Z.; Zou, X. L.; Ye, G. L.; Vajtai, R.; Yakobson, B. I. Y. et al. Vertical and in-plane heterostructures from WS2/MoS2 monolayers. Nat. Mater. 2014, 13, 1135–1142.

    Article  CAS  Google Scholar 

  105. Li, M. Y.; Shi, Y.; Cheng, C. C.; Lu, L. S.; Lin, Y. C.; Tang, H. L.; Tsai, M. L.; Chu, C. W.; Wei, K. H.; He, J. H. et al. Epitaxial growth of a monolayer WSe2-MoS2 lateral p–n junction with an atomically sharp interface. Science 2015, 349, 524–528.

    Article  CAS  Google Scholar 

  106. Zhou, X.; Zhou, N.; Li, C.; Song, H. Y.; Zhang, Q.; Hu, X. Z.; Gan, L.; Li, H. Q.; Lü, J. T.; Luo, J. et al. Vertical heterostructures based on SnSe2/MoS2 for high performance photodetectors. 2D Mater. 2017, 4, 025048.

    Article  CAS  Google Scholar 

Download references

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 91622117, 51472097, 51727809, and 21501060), the National Key Research and Development Program of China (No. 2016YFB0401100), the National Basic Research Program of China (No. 2015CB932600), and the Fundamental Research Funds for the Central University (Nos. 2015ZDTD038 and 2017KFKJXX007).

Author information

Authors and Affiliations

  1. School of Materials Science and Engineering, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China

    Shasha Zhou, Lin Gan, Deli Wang, Huiqiao Li & Tianyou Zhai

Authors
  1. Shasha Zhou
    View author publications

    You can also search for this author inPubMed Google Scholar

  2. Lin Gan
    View author publications

    You can also search for this author inPubMed Google Scholar

  3. Deli Wang
    View author publications

    You can also search for this author inPubMed Google Scholar

  4. Huiqiao Li
    View author publications

    You can also search for this author inPubMed Google Scholar

  5. Tianyou Zhai
    View author publications

    You can also search for this author inPubMed Google Scholar

Corresponding authors

Correspondence to Lin Gan or Tianyou Zhai.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Zhou, S., Gan, L., Wang, D. et al. Space-confined vapor deposition synthesis of two dimensional materials. Nano Res. 11, 2909–2931 (2018). https://doi.org/10.1007/s12274-017-1942-3

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12274-017-1942-3

Keywords