Abstract
Large-area patterned boron carbide nanowires (B4C NWs) have been synthesized using chemical vapor deposition (CVD). The average diameter of B4C NWs is about 50 nm, with a mean length of 20 μm. The B4C NWs have a single-crystal structure and conductivities around 5.1 × 10−2 Ω−1·cm−1. Field emission measurements of patterned B4C NWs films show that their turn-on electric field is 2.7 V/μm, lower than that of continuous B4C NWs films. A single nanowire also exhibits excellent flexibility under high-strain bending cycles without deformation or failure. All together, this suggests that B4C NWs are a promising candidate for flexible cold cathode materials.
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Huang, Y., Liu, F., Luo, Q. et al. Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties. Nano Res. 5, 896–902 (2012). https://doi.org/10.1007/s12274-012-0273-7
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DOI: https://doi.org/10.1007/s12274-012-0273-7