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A Numerical Study on the Growth Process of InGaSb Crystals Under Microgravity with Interfacial Kinetics

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Abstract

InxGa1−xSb bulk crystals are to be grown using a GaSb(seed)/InSb/GaSb(feed) sandwich-structured sample onboard the International Space Station (ISS). The InGaSb crystals will be grown on top of GaSb seed single crystals with different orientations viz., (111)A, (111)B, (110), (100) in order to examine and understand the growth kinetics of the crystals. In the present work, a numerical model of the crystal growth system has been developed to investigate the interface kinetics effects on the growth process by taking kinetics coefficient into account. The proposed numerical model was applied to evaluate the effect of crystal orientation on growth rate. Simulation results showed that the kinetics coefficient, whose value depends on crystal orientation, affected the growth rate of InGaSb crystal and the dissolution rate of GaSb feed crystal in the sandwich system.

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Abbreviations

C :

concentration of GaSb (-)

c p :

specific heat (J⋅kg−1⋅K−1)

D :

diffusion coefficient (m2⋅s−1)

e y :

unit vector in the vertical direction

f :

interface position (m)

g :

gravity acceleration (m⋅s−2)

L a :

latent heat (J⋅kg−1)

m :

slope of the interface

n :

unit vector normal to the interface

p :

pressure (Pa)

T :

temperature (K)

u :

fluid velocity component in the horizontal direction (m⋅s−1)

t :

time (s)

v :

fluid velocity vector (m⋅s−1)

v :

fluid velocity component in the vertical direction (m⋅s−1)

x :

horizontal direction coordinate (m)

y :

vertical direction coordinate (m)

y + :

dimensionless wall distance (-)

G:

acceleration normalised by gravity of Earth (m⋅s−2)

α :

thermal diffusivity (m2⋅s−1)

β :

kinetics coefficient (m⋅s−1)

β(0):

kinetics coefficient at the unperturbed interface (m⋅s−1)

β s t :

kinetics coefficient of steps (m⋅s−1)

β C :

solutal expansion coefficient (-)

β T :

thermal expansion coefficient (K−1)

λ :

thermal conductivity (W⋅m−1⋅K−1)

μ :

viscosity (kg⋅m−1⋅s−1)

ρ :

density (kg⋅m−3)

ν :

kinematic viscosity (m2⋅s−1)

ΔC :

concentration difference (-)

ΔT :

temperature difference (K)

ξ :

ξ-direction coordinate

η :

η-direction coordinate

BN :

boron nitride

I :

interface

L :

solution (liquid)

S :

crystal (solid)

Q :

quartz

W :

wall

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Acknowledgments

This work was financially supported by a Grant-in-Aid for Scientific Research (B) (No. 23360343) and (No. 25289087) from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

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Authors and Affiliations

  1. Department of Materials Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka, 560-8531, Japan

    H. Mirsandi, T. Yamamoto, Y. Takagi & Y. Okano

  2. Japan Aerospace Exploration Agency, 2-1-1 Sengen, Tsukuba, Ibaraki, 305-8505, Japan

    Y. Inatomi

  3. Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu, Shizuoka, 432-8011, Japan

    Y. Hayakawa

  4. Crystal Growth Laboratory, University of Victoria, Victoria, BC, V8W 3P6, Canada

    S. Dost

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  1. H. Mirsandi
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  2. T. Yamamoto
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  4. Y. Okano
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Correspondence to Y. Okano.

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Mirsandi, H., Yamamoto, T., Takagi, Y. et al. A Numerical Study on the Growth Process of InGaSb Crystals Under Microgravity with Interfacial Kinetics. Microgravity Sci. Technol. 27, 313–320 (2015). https://doi.org/10.1007/s12217-015-9417-1

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  • DOI: https://doi.org/10.1007/s12217-015-9417-1

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