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Improved extinction ratio of Mach-Zehnder based optical modulators on CMOS platform

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Abstract

Silicon based optical modulators with improved extinction ratio (ER) of 25 dB were demonstrated on complementary metal oxide semiconductor (CMOS) platform. It was proposed that the effect of optical absorption due to free carriers accumulated in silicon should be considered in the analysis of device configuration. Experimental results presented in this study were identical with the proposed analyses. The modulators were operated with the data transmission rate of 3.2 Gbps.

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Authors and Affiliations

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors (IS), Chinese Academy of Sciences (CAS), Beijing, 100083, China

    Zhiyong Li, Liang Zhou, Xi Xiao, Tao Chu, Yude Yu & Jinzhong Yu

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  1. Zhiyong Li
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  2. Liang Zhou
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  3. Xi Xiao
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  4. Tao Chu
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  5. Yude Yu
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  6. Jinzhong Yu
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Correspondence to Zhiyong Li.

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Li, Z., Zhou, L., Xiao, X. et al. Improved extinction ratio of Mach-Zehnder based optical modulators on CMOS platform. Front. Optoelectron. 5, 90–93 (2012). https://doi.org/10.1007/s12200-012-0197-6

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  • DOI: https://doi.org/10.1007/s12200-012-0197-6

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