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Investigation of Al Schottky junction on n-type CdS film deposited on polymer substrate

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Abstract

A systematic study has been made on the behavior of Al/n-CdS thin film junction on flexible polymer substrate (polyethylene terephthalate, PET) grown using thermal evaporation method. Temperature dependence of I–V measurements for this junction has been done which closely follow the equations of Schottky barrier junction dominated by thermionic emission mechanism. Intrinsic and contact properties such as barrier height, ideality factor and series resistance have been calculated from I–V characteristics. The barrier height of Al/n-CdS junction is found to increase with increase in temperature whereas ideality factor and series resistance decrease with increase in temperature.

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Authors and Affiliations

  1. Semiconductor and Polymer Science Laboratory, University of Rajasthan, Jaipur, 302055, India

    Sandhya Gupta, Dinesh Patidar, Mahesh Baboo, Kananbala Sharma & N. S. Saxena

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  1. Sandhya Gupta
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  2. Dinesh Patidar
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  3. Mahesh Baboo
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  4. Kananbala Sharma
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  5. N. S. Saxena
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Correspondence to Sandhya Gupta.

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Gupta, S., Patidar, D., Baboo, M. et al. Investigation of Al Schottky junction on n-type CdS film deposited on polymer substrate. Front. Optoelectron. China 3, 321–327 (2010). https://doi.org/10.1007/s12200-010-0102-0

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  • DOI: https://doi.org/10.1007/s12200-010-0102-0

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