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AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology

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Abstract

128 × 128, 128 × 160 and 256 × 256 AlGaAs/GaAs quantum well infrared photodetector (QWIP) focal plane arrays (FPA) as well as a large area test device are designed and fabricated. The device with n-doped back-illuminated AlGaAs/GaAs quantum structure is achieved by metal organic chemical vapor deposition (MOCVD) epitaxial growth and GaAs integrated circuit processing technology. The test device is valued by its dark current performance and Fourier transform infrared spectroscopy (FTIR) spectra at 77 K. Cut off wavelengths of 9 and 10.9 μm are realized by using different epitaxial structures. The blackbody detectivity D B* is as high as 2.6 × 109 cm⋅Hz1/2⋅W−1. The 128 6128 FPA is flip-chip bonded on a CMOS readout integrated circuit with indium (In) bumps. The infrared thermal images of some targets under room temperature background have been successfully demonstrated at 80 K operating temperature. In addition, the methods to further improve the image quality are discussed.

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Authors and Affiliations

  1. 13th Institute of China Electronic Technology Group Corporation, Shijiazhuang, 050051, China

    Xianjie Li, Yingbin Liu, Zhen Feng, Fan Guo, Yonglin Zhao, Run Zhao, Rui Zhou, Chen Lou & Shizu Zhang

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  1. Xianjie Li
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  2. Yingbin Liu
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  3. Zhen Feng
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  4. Fan Guo
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  5. Yonglin Zhao
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  6. Run Zhao
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  7. Rui Zhou
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  8. Chen Lou
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  9. Shizu Zhang
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Correspondence to Xianjie Li.

Additional information

Translated and revised from Infrared and Laser Engineering, 2007, 36(4): 435–438 [译自: 红外与激光工程]

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Li, X., Liu, Y., Feng, Z. et al. AlGaAs/GaAs quantum well infrared photodetector focal plane array based on MOCVD technology. Front. Optoelectron. China 1, 313–317 (2008). https://doi.org/10.1007/s12200-008-0051-z

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  • DOI: https://doi.org/10.1007/s12200-008-0051-z

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