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Bipolar resistive switching behaviours in ZnMn2O4 film deposited on p+-Si substrate by chemical solution deposition

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Abstract

ZnMn2O4 active layer for resistance random access memory (RRAM) was deposited on p+-Si substrate by chemical solution deposition. The bipolar resistive switching behaviours of the Ag/ZnMn2O4/p+-Si capacitor are investigated. The bipolar resistive switching is reproducible and shows high ON/OFF ratio of > 102 and long retention times of > 105 s. The conduction mechanism of the Ag/ZnMn2O4/p+-Si capacitor in the low-resistance state (LRS) is ohmic conduction, whereas that of the device in high-resistance state (HRS) successively undergoes Ohm’s law, trap-filled-limited and Child’s law conduction procedure at room temperature.

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Acknowledgements

This research work was jointly sponsored by National Natural Science Foundation of China (Grant No. 61066001 and No.51262003) and Guangxi Key Laboratory of Information Materials (Guilin University of Electronic Technology), China (Project No. 1110908-10-Z).

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Authors and Affiliations

  1. School of Material Science and Engineering, Shaanxi Normal University, Xi’an, 710062, P R China

    JIWEN XU & ZUPEI YANG

  2. School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, P R China

    JIWEN XU, YUPEI ZHANG, XIAOWEN ZHANG & HUA WANG

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  1. JIWEN XU
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  2. ZUPEI YANG
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Correspondence to JIWEN XU.

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XU, J., YANG, Z., ZHANG, Y. et al. Bipolar resistive switching behaviours in ZnMn2O4 film deposited on p+-Si substrate by chemical solution deposition. Bull Mater Sci 37, 1657–1661 (2014). https://doi.org/10.1007/s12034-014-0731-9

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  • DOI: https://doi.org/10.1007/s12034-014-0731-9

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