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Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion

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Abstract

The nucleation and growth of GaAs films on offcut (001) Ge wafers by solid source molecular beam epitaxy (MBE) is investigated, with the objective of establishing nucleation conditions which reproducibly yield GaAs films which are free of antiphase domains (APDs) and which have suppressed Ge outdiffusion into the GaAs layer. The nucleation process is monitored by in-situ reflection high energy electron diffraction and Auger electron spectroscopy. Several nucleation variables are studied, including the state of the initial Ge surface (single-domain 2×1 or mixed-domain 2×1:1×2), the initial prelayer (As, Ga, or mixed), and the initial GaAs growth temperature (350 or 500°C). Conditions are identified which simultaneously produce APD-free GaAs layers several microns in thickness on Ge wafers with undetectable Ge outdiffusion and with surface roughness equivalent to that of GaAs/GaAs homoepitaxy. APD-free material is obtained using either As or Ga nucleation layers, with the GaAs domain dependent upon the initial exposure chemical species. Key growth steps for APD-free GaAs/Ge growth by solid source MBE include an epitaxial Ge buffer deposited in the MBE chamber to bury carbon contamination from the underlying Ge wafer, an anneal of the Ge buffer at 640°C to generate a predominantly double atomic-height stepped surface, and nucleation of GaAs growth by a ten monolayer migration enhanced epitaxy step initiated with either pure As or Ga. We identify this last step as being responsible for blocking Ge outdiffusion to below 1015 cm−3 within 0.5 microns of the GaAs/Ge interface.

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References

  1. R.A. Metzger, Compound Semiconductor 2 (6), 25 (1996).

    Google Scholar 

  2. D.N. Keener, D.C. Marvin, D.J. Brinker, H.B. Curtis and P.M. Price, Proc. 26th IEEE Photovoltaic Specialists Conf. (Anaheim, CA, 1997), p. 787.

  3. S.A. Ringel, R.M. Sieg, S.M. Ting and E.A. Fitzgerald, Proc. 26th IEEE Photovoltaic Specialists Conf. (Anaheim, CA, 1997), p. 793.

  4. J.M. Kuo, E.A. Fitzgerald, Y.H. Xie and P.J. Silverman, J. Vac. Sci. Technol. B 11, 857 (1993).

    Article  CAS  Google Scholar 

  5. G.W. Wicks, Crit. Rev. in Solid State and Mater. Sci. 18, 239 (1993).

    CAS  Google Scholar 

  6. Y. Li, L. Lazzarini, L.J. Giling and G. Salviati, J. Appl. Phys. 76, 5748 (1994).

    Article  CAS  Google Scholar 

  7. Y. Li, G. Salviati, M.M.G. Bongers, L. Lazzarini, L. Nasi and L.J. Giling, J. Cryst. Growth 163, 195 (1996).

    Article  CAS  Google Scholar 

  8. E.A. Fitzgerald, J.M. Kuo, Y.H. Xie and P.J. Silverman, Appl. Phys. Lett. 64, 733 (1994).

    Article  CAS  Google Scholar 

  9. S. Strite, M.S. Ünlü, K. Adomi, G.-B. Gao, A. Agarwal, A. Rockett and H. Morkoç, J. Vac. Sci. Technol. B 8, 1131 (1990).

    Article  CAS  Google Scholar 

  10. S. Strite, D. Biswas, N.S. Kumar, M. Fradkin and H. Morkoç, Appl. Phys. Lett. 56, 244 (1990).

    Article  CAS  Google Scholar 

  11. Q. Xu, J.W.P. Hsu, S.M. Ting, E.A. Fitzgerald, R.M. Sieg and S.A. Ringel, J. Electron. Mater, in print.

  12. S. Gan, L. Li and R.F. Hicks, presented at the Materials Research Society 1997 Fall Mtg. (Boston, 1997).

  13. D.E. Aspnes and J. Ihm, Phys. Rev. Lett. 57, 3054 (1987).

    Article  Google Scholar 

  14. J.M. Zhou, L.W. Guo, Q. Cui, C.S. Peng and Q. Huang, Appl. Phys. Lett. 68, 628 (1996).

    Article  CAS  Google Scholar 

  15. X.-S. Wang, K.W. Self and W.H. Weinberg, J. Vac. Sci. Technol. A 12, 1920 (1994).

    Article  CAS  Google Scholar 

  16. H. Kroemer, J. Cryst. Growth 81, 193 (1987).

    Article  CAS  Google Scholar 

  17. P.R. Pukite and P.I. Cohen, J. Cryst. Growth 81, 214 (1987).

    Article  CAS  Google Scholar 

  18. J.H. Neave and B.A. Joyce, J. Cryst. Growth 44, 387 (1978).

    Article  CAS  Google Scholar 

  19. S.M. Newstead, R.A.A. Kubiak and E.H.C. Parker, J. Cryst. Growth 81, 49 (1987).

    Article  CAS  Google Scholar 

  20. S.M. Ting, E.A. Fitzgerald, R.M. Sieg and S.A. Ringel, J. Electron. Mater. 27, 451 (1998).

    CAS  Google Scholar 

  21. W.A. Harrison, E.A. Kraut, J.R. Waldrop and R.W. Grant, Phys. Rev. B 18, 4402 (1978).

    Article  CAS  Google Scholar 

  22. J.M. Olson and W. McMahon, presented at the Materials Research Society Fall Mtg. (Boston, 1997).

  23. Y.H. Xie, E.A. Fitzgerald, P.J. Silverman, A.R. Kortan and B.E. Weir, Mater. Sci. and Eng. B 14, 332 (1992).

    Article  Google Scholar 

  24. G. Timo, C. Flores, B. Bollani, D. Passoni, C. Bocchi, P. Franzosi, L. Lazzarini and G. Salviati, J. Cryst. Growth 125, 440 (1992).

    Article  CAS  Google Scholar 

  25. E.P. Kvam, J. Electron. Mater. 23, 1021 (1994).

    CAS  Google Scholar 

  26. N. Chand, J. Klem, T. Henderson and H. Morkoç, J. Appl. Phys. 59, 3601 (1986).

    Article  CAS  Google Scholar 

  27. D.L. Miller and J.S. Harris, Jr., Appl. Phys. Lett. 37, 1104 (1980).

    Article  CAS  Google Scholar 

  28. T. Kawai, H. Yonezu, H. Yoshida and K. Pak, Appl. Phys. Lett. 61, 1216 (1992).

    Article  CAS  Google Scholar 

  29. T. Kawai, H. Yonezu, Y. Yamauchi, M. Lopez, K. Pak and W. Kurner, J. Cryst. Growth 127, 107 (1993).

    Article  CAS  Google Scholar 

  30. Y. Okada, J.S. Harris, Jr., A. Sutoh and M. Kawabe, J. Cryst. Growth 175/176, 1039 (1997).

    Article  CAS  Google Scholar 

  31. R.D. Bringans, D.K. Biegelsen and L.-E. Swartz, Phys. Rev. B 44, 3054 (1991).

    Article  CAS  Google Scholar 

  32. W.T. Masselink, R. Fischer, J. Klem, T. Henderson and H. Morkoç, J. Vac. Sci. Technol. B 3, 548 (1985).

    Article  CAS  Google Scholar 

  33. R. Fischer, W.T. Masselink, J. Klem, T. Henderson, T.C. McGlinn, M.V. Klein, H. Morkoç, J.H. Mazur and J. Washburn, J. Appl. Phys. 58, 374 (1985).

    Article  CAS  Google Scholar 

  34. K. Mizuguchi, N. Hayafuji, S. Ochi, T. Murotani and K. Fujikawa, J. Cryst. Growth 77, 509 (1986).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Electrical Engineering, The Ohio State University, 43210, Columbus, OH

    R. M. Sieg, S. A. Ringel & R. N. Sacks

  2. Department of Materials Science and Engineering, Massachusetts Institute of Technology, 02139, Cambridge, MA

    S. M. Ting & E. A. Fitzgerald

Authors
  1. R. M. Sieg
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  2. S. A. Ringel
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  3. S. M. Ting
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  4. E. A. Fitzgerald
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  5. R. N. Sacks
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Sieg, R.M., Ringel, S.A., Ting, S.M. et al. Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion. J. Electron. Mater. 27, 900–907 (1998). https://doi.org/10.1007/s11664-998-0116-1

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  • DOI: https://doi.org/10.1007/s11664-998-0116-1

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