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Thermoelectric Properties of Co- and Mn-Doped Al2Fe3Si3

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Abstract

Al2Fe3Si3 is a promising semiconductor for application as an environmentally friendly thermoelectric material. Its intrinsic carrier concentration is 5 × 1019 cm−3 and shows p-type conduction. In this article, we report on the thermoelectric properties of carrier-doped Al2Fe3Si3. Co or Mn was substituted for Fe for electron or hole doping, respectively. Al2Fe3−xMxSi3 (M=Co or Mn; x = 0.1–1.0 for Co and 0.1–0.3 for Mn) samples were synthesized by arc melting followed by spark plasma sintering and heat treatment. The Co- and Mn-doped samples displayed Hall carrier concentrations of 1.4 × 1020 cm−3 to 5.1 × 1020 cm−3 for n-type and 1.3 × 1020 cm−3 to 1.3 × 1021 cm−3 for p-type conduction. The n-type Al2Fe3Si3 exhibited a higher absolute value of Seebeck coefficient and lower Hall carrier mobility than p-type Al2Fe3Si3 at the same carrier concentration. The power factor increased with increasing carrier concentration for n-type conduction, and reached 0.65 × 10−3 W/mK at 520 K. On the other hand, the power factor for p-type Al2Fe3Si3 was not enhanced with increasing carrier concentration. The maximum ZT value for Co-substituted Al2Fe3Si3 was 0.09 at 600 K, which is 50% higher than that of pure Al2Fe3Si3.

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Acknowledgments

This work was partly supported by Kansai Research Foundation for technology promotion.

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Authors and Affiliations

  1. Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan

    Yasutaka Shiota, Kunio Yamamoto, Yuji Ohishi, Ken Kurosaki & Hiroaki Muta

  2. JST, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan

    Ken Kurosaki

  3. Research Institute of Nuclear Engineering, University of Fukui, 1-2-4 Kanawacho, Tsuruga, Fukui, 914-0055, Japan

    Ken Kurosaki

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  1. Yasutaka Shiota
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  2. Kunio Yamamoto
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  3. Yuji Ohishi
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  4. Ken Kurosaki
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  5. Hiroaki Muta
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Correspondence to Hiroaki Muta.

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Shiota, Y., Yamamoto, K., Ohishi, Y. et al. Thermoelectric Properties of Co- and Mn-Doped Al2Fe3Si3. J. Electron. Mater. 48, 475–482 (2019). https://doi.org/10.1007/s11664-018-6735-2

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  • DOI: https://doi.org/10.1007/s11664-018-6735-2

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