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Structural and Electrical Properties of Ga2O3 Films Deposited under Different Atmospheres by Pulsed Laser Deposition

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Abstract

The effects of oxygen and nitrogen pressure on the structural and electrical properties of crystalline β-Ga2O3 films grown by pulsed laser deposition were investigated. We found that varying the oxygen pressure from 1 × 10−4 Pa to 1 × 10−1 Pa changed the resistivity from the order of 102–103 Ω cm. Adjusting the nitrogen pressure from 1 × 10−4 Pa to 1 × 10−1 Pa increased the resistivity from the order of 104–105 Ω cm. Oxygen and nitrogen pressures in the range from 1 × 10−4 Pa to 1 × 10−1 Pa had no obvious influence on the crystal quality, surface morphology, or transmittance of the β-Ga2O3 films grown at 500°C on sapphire substrates. All the films showed a (− 201) oriented monoclinic structure with smooth surfaces and high transmittance. The obtained β-Ga2O3 films have potential for applications in thin film resistors for monolithic microwave integrated circuits.

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Acknowledgments

This work was partially supported by the National Natural Science Foundation of China (61764001, 61474031); Guangxi Key Laboratory of Precision Navigation Technology and Application (DH201701); Guangxi District Education Office projects to enhance the basic ability of young teachers (2017KY0201); Japan Society for Promotion of Science (JSPS) for providing grants (KAKENHI Grant Numbers 16K06268). We thank Andrew Jackson, PhD, from Liwen Bianji, Edanz Group China (www.liwenbianji.cn/ac), for editing the English text of a draft of this manuscript.

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Authors and Affiliations

  1. Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, China

    Fabi Zhang & Haiou Li

  2. Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga, 840-8502, Japan

    Fabi Zhang & Qixin Guo

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  1. Fabi Zhang
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  2. Haiou Li
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  3. Qixin Guo
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Correspondence to Haiou Li or Qixin Guo.

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Zhang, F., Li, H. & Guo, Q. Structural and Electrical Properties of Ga2O3 Films Deposited under Different Atmospheres by Pulsed Laser Deposition. J. Electron. Mater. 47, 6635–6640 (2018). https://doi.org/10.1007/s11664-018-6545-6

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  • DOI: https://doi.org/10.1007/s11664-018-6545-6

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