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Demonstrating Valence Band-Edge Effective Work Function by Aluminum Implantation in High-k/Metal Gate p-MOSFET with Incorporated Fluorine

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Abstract

This work demonstrates the valence band-edge effective work function (φ m ,eff) of a titanium nitride (TiN) gate with a hafnium oxide (HfO2) dielectric using a cost-effective, low-complexity gate-first integration scheme. Aluminum (Al) ion implantation following TiN gate stack formation yielded a φ m ,eff of 5.0 eV without an equivalent oxide thickness penalty. Additionally, the incorporation of fluorine (F) into the HfO2 dielectric by the channel implantation approach further improved φ m ,eff to 5.1 eV. This technique for modulating φ m ,eff has potential for threshold-voltage tuning without any process complexity in high-k/metal gate low-power applications.

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Authors and Affiliations

  1. ATD Exploratory Technologies Division, United Microelectronics Corporation (UMC), Nanke 3rd Rd., Tainan Science Park, Tainan, 74147, Taiwan, ROC

    Y.W. Chen, C.M. Lai, L.W. Cheng, C.H. Hsu & C.W. Liang

  2. Department of Materials Science and Engineering, National Tsing Hua University, 101, Sec. 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan, ROC

    Y.W. Chen

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  1. Y.W. Chen
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  2. C.M. Lai
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  3. L.W. Cheng
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  5. C.W. Liang
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Correspondence to Y.W. Chen.

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Chen, Y., Lai, C., Cheng, L. et al. Demonstrating Valence Band-Edge Effective Work Function by Aluminum Implantation in High-k/Metal Gate p-MOSFET with Incorporated Fluorine. J. Electron. Mater. 41, 1936–1940 (2012). https://doi.org/10.1007/s11664-012-1957-1

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  • DOI: https://doi.org/10.1007/s11664-012-1957-1

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