Abstract
The effect of Pd(P) thickness on the solid–solid reaction between Sn-3Ag-0.5Cu and Au/Pd(P)/Ni(P) at 180°C was investigated in this study. The reaction was conducted after reflow, thereby removing the Au/Pd finish before the solid-state reaction. The reaction products included (Cu,Ni)6Sn5, Ni2SnP, and Ni3P, and their growth strongly depended on the Pd(P) thickness, especially for the former phases [i.e., (Cu,Ni)6Sn5 and Ni2SnP]. As the Pd(P) thickness increased from 0 μm, to 0.1 μm, to 0.22 μm, the (Cu,Ni)6Sn5 exhibited a needle-like dense layer, chunk-like morphology, and discontinuous morphology, respectively. The alternative phase (Ni2SnP) behaved in a manner opposite to that of (Cu,Ni)6Sn5, growing with a discontinuous morphology to a dense layer with increasing Pd(P) thickness. However, this strong dependence disappeared when the solder joints were subsequently subjected to solid-state aging. The (Cu,Ni)6Sn5 and Ni2SnP both became layered structures for all cases examined. A high-speed ball shear (HSBS) test was conducted to quantify the mechanical response of the interfacial microstructures. The HSBS test results showed that any initial difference in shear strength caused by the various Pd(P) thicknesses could be reduced after the solid-state aging, which is consistent with the microstructural evolution observed. The mechanical strength of the solder joints was decreased due to the presence of a bi-intermetallic structure of (Cu,Ni)6Sn5/Ni2SnP at the interface. Detailed analysis of the growth of (Cu,Ni)6Sn5 and Ni2SnP is also provided.
Similar content being viewed by others
References
B. Kao, M. Oezkoek, and H. Roberts, Proceedings of the 5th International Microsystems Packaging Assembly and Circuits Technology (IMPACT) Conference and International 3D IC Conference, article number: 5699489, 20–22 Oct 2010, Taipei, Taiwan.
W. Sun, W.H. Zhu, E.S.W. Poh, H.B. Tan, and R.T. Gan, Proceeding of International Conference on Electronic Packaging Technology & High Density Packaging, ICEPT-HDP (2008), p. 1.
Y.W. Yen, P.H. Tsai, Y.K. Fang, S.C. Lo, Y.P. Hsieh, and C. Lee, J. Alloys Compd. 503, 25 (2010).
J.W. Yoon, B.I. Noh, J.H. Yoon, H.B. Kang, and S.B. Jung, J. Alloys Compd. 509, 153 (2011).
P. Ratchev, S. Stoukatch, and B. Swinnen, Microelectron. Reliab. 46, 1315 (2006).
P. Snugovsky, P. Arrowsmith, and M. Romansky, J. Electron. Mater. 30, 1262 (2001).
R.J. Coyle, D.E.H. Popps, A. Mawer, D.P. Cullen, G.M. Wenger, and P.P. Solan, IEEE Trans. Compon. Packag. Technol. 26, 724 (2003).
K. Zeng, R. Stierman, D. Abbott, and M. Murtuza, JOM 58, 75 (2006).
K. Suganuma and K.S. Kim, JOM 60, 61 (2008).
B.K. Kim, S.J. Lee, J.Y. Kim, K.Y. Ji, Y.J. Yoon, M.Y. Kim, S.H. Park, and J.S. Yoo, J. Electron. Mater. 37, 527 (2008).
H. Roberts and K. Johal, Lead-Free Soldering (New York: Springer, 2007), pp. 221–269.
W.H. Wu, C.S. Lin, S.H. Huang, and C.E. Ho, J. Electron. Mater. 39, 2387 (2010).
P.G. Kim, K.N. Tu, and D.C. Abbott, J. Appl. Phys. 84, 770 (1998).
G. Ghosh, J. Electron. Mater. 28, 1238 (1999).
S.P. Peng, W.H. Wu, C.E. Ho, and Y.M. Huang, J. Alloys Compd. 493, 431 (2010).
K.W. Moon, W.J. Boettinger, U.R. Kattner, F.S. Biancaniello, and C.A. Handwerker, J. Electron. Mater. 29, 1122 (2000).
C.E. Ho (Ph.D. Thesis, National Central University, Taiwan, June 2002).
T. Laurila, V. Vuorinen, and J.K. Kivilahti, Mater. Sci. Eng. R49, 1 (2005).
W.C. Luo, C.E. Ho, J.Y. Tsai, Y.L. Lin, and C.R. Kao, Mater. Sci. Eng. A 396, 384 (2005).
BGA Ball Shear, JESD22-B117, JEDEC Solid State Technology Association (2006).
W.G. Bader, Weld. J. Res. Suppl. 48, 551 (1969).
C.E. Ho, Y.M. Chen, and C.R. Kao, J. Electron. Mater. 28, 1231 (1999).
P.T. Vianco, J.A. Rejent, G.L. Zender, and P.F. Hlava, Metall. Mater. Trans. A 41, 3042 (2010).
S. Furuseth and H. Fjellvag, Acta Chem. Scand. A 39, 537 (1985).
Y.C. Lin and J.G. Duh, Scr. Mater. 54, 1661 (2006).
Y.C. Lin, K.J. Wang, and J.G. Duh, J. Electron. Mater. 39, 283 (2010).
C.E. Ho, R.Y. Tsai, Y.L. Lin, and C.R. Kao, J. Electron. Mater. 31, 548 (2002).
C.E. Ho, S.C. Yang, and C.R. Kao, J. Mater. Sci.-Mater. Electron. 18, 155 (2007).
K. Nogita, C.M. Gourlay, and T. Nishimura, JOM 61, 45 (2009).
C.S. Huang, J.H. Yeh, B.L. Young, and J.G. Duh, J. Electron. Mater. 31, 1230 (2002).
S.J. Wang and C.Y. Liu, Scr. Mater. 49, 813 (2003).
S.W. Kim, J.W. Yoon, and S.B. Jung, J. Electron. Mater. 33, 1182 (2004).
Y.C. Sohn, J. Yu, S.K. Kang, D.Y. Shih, and T.Y. Lee, J. Mater. Res. 19, 2428 (2004).
J.W. Yoon and S.B. Jung, J. Alloys Compd. 396, 122 (2005).
S.T. Kao and J.G. Duh, J. Electron. Mater. 34, 1129 (2005).
V. Vuorinen, T. Laurila, H. Yu, and J.K. Kivilahti, J. Appl. Phys. 99, 023530 (2006).
S.C. Yang, C.C. Chang, M.H. Tsai, and C.R. Kao, J. Alloys Compd. 499, 149 (2010).
C.S. Liu, C.E. Ho, R. Peng, and C.R. Kao, J. Electron. Mater., in press (doi:10.1007/s11664-011-1666-1).
B.F. Dyson, T.R. Anthony, and D. Turnbull, J. Appl. Phys. 38, 3408 (1967).
C.E. Ho, S.W. Lin, and Y.C. Lin, J. Alloys Compd. 509, 7749 (2011).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Ho, C.E., Wu, W.H., Hsu, L.H. et al. Solid–Solid Reaction Between Sn-3Ag-0.5Cu Alloy and Au/Pd(P)/Ni(P) Metallization Pad with Various Pd(P) Thicknesses. J. Electron. Mater. 41, 11–21 (2012). https://doi.org/10.1007/s11664-011-1722-x
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-011-1722-x