The electrical and optical thermal stability of indium tin oxide (ITO)/Al bilayers are investigated in this study. The electrical resistivity of ITO and ITO/Al multilayers, both about 1 × 10−3 Ω cm after annealing at 300°C for 1 min, are measured by the four-probe measurement method. In addition to the electrical measurements, we also observe the rapid initial diffusion of Al atoms into the ITO thin films. When the diffusing elemental Al atoms occupy interstitial sites they tend to form defects, causing a serious decrease in the reflectance of the a-ITO/Al bilayer in the wavelength region from 400 nm to 600 nm.
Similar content being viewed by others
References
D.A. Steigerwald, J.C. Bhat, D. Collins, R.M. Fletcher, M.O. Holcomb, M.J. Ludowise, P·S. Martin, and S.L. Rudaz, IEEE J. Sel. Top. Quantum Electron. 8, 310 (2002).
T. Fujii, Y. Gao, R. Sharma, E.L. Hu, S·P. Denbaars, and S. Nakamura, Appl. Phys. Lett. 84, 855 (2004). doi:10.1063/1.1645992.
C.L. Lin, S.J. Wang, and C.Y. Liu, Electrochem. Solid State Lett. 8, G265 (2005). doi:10.1149/1.2012203.
H·W. Jang and J.L. Lee, Appl. Phys. Lett. 85, 5920 (2004). doi:10.1063/1.1835535.
S.Y. Kim and J.L. Lee, Electrochem. Solid State Lett. 7, G102 (2004). doi:10.1149/1.1676115.
C.M. Liu, W.L. Liu, W.J. Chen, S·H. Hsieh, T.K. Tsai, and L.C. Yang, J. Electrochem. Soc. 152, G234 (2005). doi:10.1149/1.1860511.
H. Morikawa, H. Kuratz, and M. Fujita, J. Electron Microsc. 49, 67 (2000).
H. Kim, A. Piqu’e, J.S. Horwitz, H. Murata, Z.H. Kafafi, C.M. Gilmore, and D.B. Chrisey, Thin Solid Films 377–378, 798 (2000). doi:10.1016/S0040-6090(00)01290-6.
E. Bertran, C. Corbella, M. Vives, A. Pinyol, C. Person, and I. Porqueras, Solid State Ionics 265, 139 (2003). doi:10.1016/j.ssi.2003.08.055.
Acknowledgement
The authors would like to thank the Taiwan NSC (National Science Council) and NCUOSC (National Central University Optical Science Center) for their support of this research.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Lin, Y., Liu, C. Reflectivity and Abnormal Absorption at ITO/Al Interface. J. Electron. Mater. 38, 108–112 (2009). https://doi.org/10.1007/s11664-008-0578-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-008-0578-1