Abstract
We report experiments on the formation of GaN nanowires on epitaxial GaN using thin layers of Ni. GaN covered with Ni shows roughening that is strongly dependent on the thickness of the Ni layer and the annealing conditions. With the initial Ni thickness of 0.8 nm we observe formation of Ni-filled antidots. These act as nucleation sites in the growth of GaN nanowires, allowing for the preparation of nanowires with an average diameter as small as 30 nm. Dense and well-oriented nanowires are formed by pulsed metallorganic chemical vapor deposition at 750°C. The size of the Ni features determines the diameter of the GaN nanowires, resulting in good control over the formation process.
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Acknowledgements
The authors acknowledge support of this research by the National Science Foundation (CTS-0210141 and ECS-0304224) and the J. F Maddox Foundation. TEM work was carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant DEFG02-91-ER45439. The authors would like to thank Dr. J.G. Wen for help with the TEM work.
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Aurongzeb, D., Song, D., Kipshidze, G. et al. Growth of GaN Nanowires on Epitaxial GaN. J. Electron. Mater. 37, 1076–1081 (2008). https://doi.org/10.1007/s11664-008-0483-7
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DOI: https://doi.org/10.1007/s11664-008-0483-7