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Antimonide Type-II “W” Photodiodes with Long-Wave Infrared R 0 A Comparable to HgCdTe

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Abstract

The recent development of graded-gap W-structured superlattices (GG-Ws) has led to a substantial improvement in the dark current performance of infrared photodiodes implemented with type-II superlattices (T2SLs). A study of ten GG-W photodiode wafers with 50% power responsivity cutoffs from 9 μm to 13.4 μm is presented. Dark current performance has increased by a factor of 10 over that of previous type-II structures, without degrading quantum efficiency. In relation to HgCdTe (MCT) based photodiodes, several samples in the study show effective dynamic-resistance-area products close to the MCT trend line for diffusion-limited R 0 A.

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Acknowledgements

We gratefully acknowledge helpful discussions with W.E. Tennant, Teledyne Scientific Co. This work was supported by the Office of Naval Research.

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Authors and Affiliations

  1. Naval Research Laboratory, Washington, DC, 20375, United States

    C.L. Canedy, E.H. Aifer, I. Vurgaftman, J.G. Tischler, J.R. Meyer & J.H. Warner

  2. SFA Inc, Crofton, MD, 21114, United States

    E.M. Jackson

Authors
  1. C.L. Canedy
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  2. E.H. Aifer
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  3. I. Vurgaftman
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  4. J.G. Tischler
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  5. J.R. Meyer
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  6. J.H. Warner
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  7. E.M. Jackson
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Correspondence to J.R. Meyer.

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Canedy, C., Aifer, E., Vurgaftman, I. et al. Antimonide Type-II “W” Photodiodes with Long-Wave Infrared R 0 A Comparable to HgCdTe. J. Electron. Mater. 36, 852–856 (2007). https://doi.org/10.1007/s11664-007-0109-5

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  • DOI: https://doi.org/10.1007/s11664-007-0109-5

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