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Identification of a Three-Site Defect in Semi-Insulating 4H-SiC

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Using electron paramagnetic resonance (EPR), we observe a defect that increases significantly with annealing temperature. This spin S = 1 defect is characterized by g x ≈ g y ≈ g z  = 2.0056 and a fine structure splitting D ∼ 100 G whose principal axis lies in a plane perpendicular to the c-axis. Also resolved are several hyperfine interactions with the low abundance 29Si and 13C neighboring nuclei. A careful analysis of the intensity of these hyperfine lines allows a precise determination of the identity and the quantity of interacting nuclei. This center is diamagnetic in the ground state but can be excited into a paramagnetic triplet state by sub-bandgap light. We identify this new defect as a three-site vacancy involving V C-V Si-V C. The angular dependence of the 13C hyperfine interaction supports the proposed model. These may be the simplest of a family of more complex and extended defects that play a role in the semi-insulating (SI) character of SiC.

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Acknowledgements

The work at NRL was supported by the ONR, and the work at Penn State was supported by the AFRL and ONR. One of the authors (NYG) is an NRC Postdoctoral Fellow.

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Authors and Affiliations

  1. Naval Research Laboratory, Washington, DC, 20375, USA

    N. Y. Garces, W. E. Carlos & E. R. Glaser

  2. Electro-Optics Center, Pennsylvania State University, Freeport, PA, 16229, USA

    M. A. Fanton

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  1. N. Y. Garces
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  2. W. E. Carlos
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  3. E. R. Glaser
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  4. M. A. Fanton
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Correspondence to N. Y. Garces.

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Garces, N.Y., Carlos, W.E., Glaser, E.R. et al. Identification of a Three-Site Defect in Semi-Insulating 4H-SiC. J. Electron. Mater. 36, 268–271 (2007). https://doi.org/10.1007/s11664-006-0043-y

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