Abstract
Epitaxial ZnSe layers were grown by molecular beam epitaxy (MBE) to study Cr incorporation with the long-term goal of demonstrating an alternate route for achieving transition-metal-doped lasers. Concentrations between 1015 atoms cm−3 and 4×1020 atoms cm−3 were achieved. Secondary ion-mass spectroscopy (SIMS) concentration profiles strongly suggest that surface segregation and accumulation of Cr occurs during growth. Photoluminescence (PL) measurements indicate Cr is incorporated in the optically active Cr2+ state up to levels of ∼1019 cm−3. Electron paramagnetic resonance (EPR) studies suggest that the Cr atoms exhibit collective magnetic behavior even at these levels. X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) indicate high structural quality is maintained for Cr incorporation for levels up to ∼1019 atoms cm−3.
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L.D. DeLoach, R.H. Page, G.D. Wilke, S.A. Payne, and W.F. Krupke, IEEE J. Quantum Electron. 32, 885 (1996)
L.A. Kulakova, N.V. Zotova, S.A. Karandashov, B.A. Matveev, B.T. Melekh, N.M. Stus, and G.N. Talalakin, Tech. Digest 216, CWL4 (1996).
R.U. Martinelli, D.Z. Garbuzov, H. Lee, P.K. York, R.J. Menna, J.C. Connoly, and S.Y. Narayan, Proc. SPIE 2382, 250 (1995).
G.J. Wagner, T.J. Carrig, R.H. Page, K.I. Shaffers, J.-O. Ndap, X. Ma, and A. Burger, Opt. Lett. 24, 19 (1999).
R.S. Title, Phys. Rev. 133, A1613 (1964).
B.K. Rai, R.S. Katiyar, K.-T. Chen, and Arnold Burger, J. Appl. Phys. 83, 6011 (1998).
Z. Yu, S.L. Buczkowski, N.C. Giles, and T.H. Myers, Appl. Phys. Lett. 69, 82 (1996).
T.H. Myers, A.J. Ptak, B.L. VanMil, M. Moldovan, M.P. Nelson, J.M. Ribar, and C.T. Zugates, J. Vac. Sci. Technol. B 18, 2295 (2000).
Evans Analytical Group, Charles Evans and Associates, Sunnyvale, CA.
C.I. Rablau, J.-O. Ndap, X. Ma, A. Burger, and N.C. Giles, J. Electron. Mater. 28, 678 (1999).
M. Knudsen, Ann. Phys. (Leipzig) 4, 999 (1909).
N.F. Ramsey, Molecular Beams (London: Oxford University Press, 1956).
C.E.C. Wood, D. DeSimone, K. Singer, and G.W. Wicks, J. Appl. Phys. 53, 4230 (1982).
D. DeSimone, C.E.C. Wood, and C.A. Evans, Jr., J. Appl. Phys. 53, 4938 (1982).
T.J. Carrig, G.J. Wagner, A. Sennaroglu, J.Y. Jeong, and C.R. Polluck, Opt. Lett. 25, 168 (2000).
M.U. Lehr, B. Litzenburger, J. Kreiss, U.W. Pohl, H.R. Selber, H.-J. Schulz, A. Klimakow, and L. Worschech, J. Phys. Condens. Matter 9, 753 (1997).
G. Grebe, G. Roussos, and H.-J. Schulz, J. Phys. C: Solid State Phys. 9, 4511 (1976).
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Vanmil, B.L., Ptak, A.J., Bai, L. et al. Heavy Cr doping of ZnSe by molecular beam epitaxy. J. Electron. Mater. 31, 770–775 (2002). https://doi.org/10.1007/s11664-002-0234-0
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DOI: https://doi.org/10.1007/s11664-002-0234-0