Abstract
Cubic crystalline silicon-carbon nitride (Si1−x−yCxNy) films have been grown successfully using various carbon sources by rapid-thermal chemical-vapor deposition (RTCVD). The characteristics of the Si1−x−yCxNy films grown with SiH3CH3, C2H4, and C3H8 are examined and compared by x-ray photoelectron spectroscopy (XPS) spectra, scanning electron microscopy (SEM) images, and transmission electron microscopy (TEM) patterns. The XPS spectra show that the differences of chemical composition and chemical-bonding state are co-related to the C bonding type of the different carbon source. The SEM images and TEM analysis indicate that the better Si1−x−yCxNy film can be obtained using C3H8 gas as the carbon source. In addition, correlations between the growing stages to the microstructure of the cubic-crystalline Si1−x−yCxNy films have been illustrated in detail.
Similar content being viewed by others
References
C.H. Hsieh, Y.S. Huang, K.K. Tiong, C.W. Fan, Y.F. Chen, L.C. Chen, J.J. Wu, and K.H. Chen, J. Appl. Phys. 87, 280 (2000).
D.M. Bhusari, C.K. Chen, K.H. Chen, T.J. Chuang, L.C. Chen, and M.C. Lin, J. Mater. Res. 12, 322 (1997).
K.H. Chen, J.J. Wu, C.Y. Wen, L.C. Chen, C.W. Fan, P.F. Kuo, Y.F. Chen, and Y.S. Huang, Thin Solid Films 355–356, 205 (1999).
X.C. Xiao, Y.W. Li, L.X. Song, X.F. Peng, and X.F. Hu, Appl. Surf. Sci. 156, 155 (2000).
W.T. Hsieh, Y.K. Fang, K.H. Wu, W.J Lee, and C.W. Ho, IEEE Trans. Electron. Dev. 48, 801 (2001).
K.H. Wu, Y.K. Fang, J.J. Ho, W.T. Hsieh, and T.J. Chen, IEEE Electron. Dev. Lett. 19, 294 (1998).
K.H. Wu, Y.K. Fang, J.J. Ho, W.T. Hsieh, W.H. Chuang, and J.D. Hwang, IEEE Photonics Technol. Lett. 10, 1611 (1998).
K.H. Wu, Y.K. Fang, J.J. Ho, and T.J. Chen, IEEE Electron. Lett. 33, 1824 (1997).
J.D. Hwang, Y.K. Fang, K.H. Wu, and S.M. Chou, IEEE Electron. Dev. 44, 2029 (1997).
J.J. Wu, C.T. Wu, Y.C. Liao, T.R. Lu, L.C. Chen, K.H. Chen, L.G. Hwa, C.T. Kuo, and K.J. Liang, Thin Solid Films 355–356, 417 (1999).
B.R. Stoner, G.H.M. Ma, S.D. Wolter, and J.T. Glass, Phys. Rev. B 45, 11067 (1992).
D. Marton, K.J. Boyd, A.H. Al-Bayati, S.S. Todorov, and J.W. Rabalais, Phys. Rev. Lett. 73, 118 (1994).
F.J. Gomez, P. Prieto, E. Elizalde, and J. Piqueras, Appl. Phys. Lett. 69, 773 (1996).
W.F.A. Besling, A. Goossens, B. Meester, and J. Schoonmam, J. Appl. Phys. 83, 544 (1998).
Database maintained and distributed by the International Centre for Diffraction Data (ICDD), Netown Square, PA (1999).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Ting, SF., Fang, YK., Hsieh, WT. et al. Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition. J. Electron. Mater. 31, 1341–1346 (2002). https://doi.org/10.1007/s11664-002-0119-2
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-002-0119-2