Skip to main content
SpringerLink
Log in

Fabrication and characterization of graphene derived from SiC

  • Article
  • 85th Anniversary for the Institute of Physics, Chinese Academy of Sciences
  • Published:
Science China Physics, Mechanics and Astronomy Aims and scope Submit manuscript

An Erratum to this article was published on 14 March 2014

Abstract

Using novel ideas for the fabrication of epitaxial graphene (EG) on SiC, two forms of graphene termed as vertical aligned graphene sheets (VAGS) and graphene covered SiC powder (GCSP) were derived, respectively, from SiC slices and SiC powder, aimed for applications in energy storage and photocatalysis. Herein, the fabrication procedures, morphology characteristics, some intrinsic physical properties and performances for applications in field effect transistor (FET) and cold cathode field emission source are revealed and analyzed based on the graphene materials. The EG on a 2-inch SiC (0001) showed an average sheet resistance about 720 Ω/□ with a non-uniformity 7.2%. The FETs fabricated on the EG possessed a cutoff frequency 80 GHz. Based on the VAGS derived from a completely carbonized SiC slice, a magnetic phase diagram of graphene with irregular zigzag edges is also reported.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films. Science, 2004, 306: 666–669

    Article  ADS  Google Scholar 

  2. Novoselov K S, Geim A K, Morozov S V, et al. Two-dimensional gas of massless dirac fermions in graphene, Nature, 2005, 438: 197–200

    Article  ADS  Google Scholar 

  3. Kim K S, Zhao Y, Jang H, et al. Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature, 2009, 457: 706–710

    Article  ADS  Google Scholar 

  4. Bae S, Kim H, Lee Y, et al. Roll-to-roll production of 30-inch graphene films for transparent electrodes. Nat Nanotech, 2010, 5: 574–578

    Article  ADS  Google Scholar 

  5. Virojanadara C, Syväjarvi M, Yakimova R, et al. Homogeneous large-area graphene layer growth on 6H-SiC (0001). Phys Rev B, 2008, 78: 245403

    Article  ADS  Google Scholar 

  6. Emtsev K V, Bostwick A, Horn K, et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nat Mater, 2009, 8: 203–207

    Article  ADS  Google Scholar 

  7. Novoselov K S, Fal’ko V I, Colombo L, et al. A road map for graphene. Nature, 2012, 490: 192–200

    Article  ADS  Google Scholar 

  8. Lee Y, Bae S, Jang H, et al. Wafer-scale synthesis and transfer of graphene films. Nano Lett, 2010, 10: 490–493

    Article  ADS  Google Scholar 

  9. Robinson J, Weng X, Trumbull K, et al. Nucleation of epitaxial graphene on SiC (0001). ACS Nano, 2010, 4: 153–158

    Article  Google Scholar 

  10. Lin Y M, Dimitrakopoulos C, Jenkins K A, et al. 100-GHz transistors from wafer-scale epitaxial graphene. Science, 2010, 327: 662

    Article  ADS  Google Scholar 

  11. Hernandez Y, Nicolosi V, Lotya M, et al. High-yield production of graphene by liquid-phase exfoliation of graphite. Nat Nanotech, 2008, 3: 563–568

    Article  ADS  Google Scholar 

  12. Coleman J N, Lotya M, O’Neill A, et al. Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Science, 2011, 331: 568–571

    Article  ADS  Google Scholar 

  13. Schniepp H C, Li J L, McAllister M J, et al. Functionalized single graphene sheets derived from splitting graphite oxide. J Phys Chem B, 2006, 110: 8535–8539

    Article  Google Scholar 

  14. Jia Y P, Guo L W, Chen X L, et al. Wafer-scale graphene on 2 inch SiC with uniform structural and electrical characteristics. Chin Sci Bull, 2012, 57: 3022–3025

    Article  Google Scholar 

  15. Zhu K X, Guo L W, Chen X L, et al. Graphene covered SiC powder as advanced photocatalytic material. Appl Phys Lett, 2012, 100: 023113

    Article  ADS  Google Scholar 

  16. Huang Q S, Guo L W, Chen X L, et al. Approaching the intrinsic electron fiels-emission of a graphene film consisting of quasi-freestanding graphene strips. Small, 2011, 7: 450–454

    Article  Google Scholar 

  17. Malard L M, Pimenta M A, G Dresselhaus, et al. Raman spectroscopy in graphene. Phys Rep, 2009, 473: 51–87

    Article  ADS  Google Scholar 

  18. Chen L L, Guo L W, Chen X L, et al. Fabrication of vertically aligned graphene sheets on SiC substrates. RSC Adv, 2013, 3: 13926–13933

    Article  Google Scholar 

  19. Wu Y Q, Jenkins K A, Valdes-Garcia A, et al. State-of-the-art graphene high-frequency electronics. Nano Lett, 2012, 12: 3062–3067

    Article  Google Scholar 

  20. Inoue T, Fujishima A, Konishi S, et al. Photoelectrocatalytic reduction of carbon dioxide in aqueous suspensions of semiconductor powders. Nature, 1979, 277: 637–638

    Article  ADS  Google Scholar 

  21. Wang H, Quan X, H Yu, et al. Fabrication of a TiO2/carbon nanowall heterojunction and its photocatalytic ability. Carbon, 2008, 46: 1126–1132

    Article  Google Scholar 

  22. Manga K K, Zhou Y, Yan Y, et al. Multilayer hybrid films consisting of alternating graphene and Titania nanosheets with ultrafast electron transfer and photoconversion properties, Adv Funct Mater, 2009, 19: 3638–3643

    Article  Google Scholar 

  23. Chen L L, Guo L W, Chen X L, et al. Towards intrinsic magnetism of graphene sheets with irregular zigzag edges. Sci Rep, 2013, doi:10.1038/srep02599

    Google Scholar 

  24. Yazyev O V, Katsnwlson M I. Magnetic correlations at graphene edges: Basis for novel spintronics devices. Phys Rev Lett, 2008, 100: 047209

    Article  ADS  Google Scholar 

  25. Lin J J, Guo L W, Chen X L, et al. Anharmonic phonon effects in Raman spectra of unsupported vertical graphene sheets. Phys Rev B, 2011, 83: 125430

    Article  ADS  Google Scholar 

  26. Chen L L, Guo L W, Chen X L, et al. Comparison of the field emission characteristics of vertically aligned graphene sheets grown on different SiC substrates. Chin Phys B, 2013, 22: 107901

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    YuPing Jia, LiWei Guo, Wei Lu, Yu Guo, JingJing Lin, KaiXing Zhu, LianLian Chen, QingSong Huang, Jiao Huang, ZhiLin Li & XiaoLong Chen

Authors
  1. YuPing Jia
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. LiWei Guo
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Wei Lu
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Yu Guo
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. JingJing Lin
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. KaiXing Zhu
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. LianLian Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. QingSong Huang
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. Jiao Huang
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. ZhiLin Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. XiaoLong Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding authors

Correspondence to LiWei Guo or XiaoLong Chen.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Jia, Y., Guo, L., Lu, W. et al. Fabrication and characterization of graphene derived from SiC. Sci. China Phys. Mech. Astron. 56, 2386–2394 (2013). https://doi.org/10.1007/s11433-013-5348-2

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11433-013-5348-2

Keywords

Search

Navigation