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Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature

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Abstract

High mobility and c-axis orientated ZnO thin films were deposited on glass substrates using RF sputtering method at room temperature. Structural properties of ZnO thin films were investigated by X-ray diffraction (XRD). Surface morphology and roughness were studied with scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrical properties were measured at room temperature using a Hall effect measurement system. The influence of sputtering power on characteristics of ZnO thin films is studied. The results indicate that the sputtering powers have great influence on the crystal quality and mobility of ZnO thin films. By using optimized sputtering conditions, high crystal quality ZnO thin films with Hall mobility of 34 cm2/V·s at room temperature were obtained.

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Authors and Affiliations

  1. Institute of Microelectronics, Peking University, Beijing, 100871, China

    DeDong Han, Yi Wang, ShengDong Zhang, Lei Sun & RuQi Han

  2. Department of Electrical Engineering, Keio University, Tokyo, Japan

    Satoru Matsumoto & Yuji Ino

Authors
  1. DeDong Han
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  2. Yi Wang
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  3. ShengDong Zhang
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  4. Lei Sun
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  5. RuQi Han
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  6. Satoru Matsumoto
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  7. Yuji Ino
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Correspondence to Yi Wang or Lei Sun.

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Han, D., Wang, Y., Zhang, S. et al. Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature. Sci. China Inf. Sci. 55, 951–955 (2012). https://doi.org/10.1007/s11432-011-4347-z

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  • DOI: https://doi.org/10.1007/s11432-011-4347-z

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