Abstract
In this study, the electrochemical behavior of monocrystalline bare Si and Ag-coated Si in hydrofluoric acid (HF) solutions with and without hydrogen peroxide (H2O2) was systematically tested with an electrochemical technique. By analyzing the polarization curves, the corrosion processes were quantified and the etchants which govern the formation of silicon nanowires (SiNWs) were determined. It was discovered that both H2O2 and Ag enhanced the reduction reactions, irrespective of the conductivity type and doping concentration of Si. It is believed that the formation of SiNWs via Metal-Catalyzed Electroless Etching is a process controlled by cathodic reduction reactions.
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Liu, L. A comparative electrochemical investigation of silicon nanowires formation via metal-catalyzed electroless etching. Sci. China Technol. Sci. 58, 362–368 (2015). https://doi.org/10.1007/s11431-014-5740-9
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DOI: https://doi.org/10.1007/s11431-014-5740-9