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GaAs backside via-hole etching using ICP system

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Abstract

A high etch rate GaAs via-hole process was studied in an inductively coupled plasma system using Cl2/BCl3 gas system. The effects of process parameters on the GaAs etch rate were investigated. The influences of photoresist SiO2 and Ni masks on the resultant profiles were also studied by scanning electron microscopy. A maximum etch rate of 8.9 μm/min was obtained and the etched profiles were optimized.

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Authors and Affiliations

  1. Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China

    Wang HaiLing, Guo Xia & Shen GuangDi

Authors
  1. Wang HaiLing
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  2. Guo Xia
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  3. Shen GuangDi
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Corresponding author

Correspondence to Guo Xia.

Additional information

Supported by the National Natural Science Foundation of China (Grant No. 60506012), Beijing Education Committee Project (Grant No. KZ200510005003), Beijing Municipal Talented Person Education Plan Item (Grant No. 05002015200504), Beijing Municipal Scientific New-star Plan (Grant No. 2005A11) and the Hi-Tech Research and Development Program of China (Grant No. 2006AA03A121)

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Wang, H., Guo, X. & Shen, G. GaAs backside via-hole etching using ICP system. Sci. China Ser. E-Technol. Sci. 50, 749–754 (2007). https://doi.org/10.1007/s11431-007-0032-2

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  • DOI: https://doi.org/10.1007/s11431-007-0032-2

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