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The study of quantum efficiency in PIN photodiodes in terms of temperature and capacitive effects under non-uniform illumination conditions

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Abstract

In this article the impacts of quantum efficiency and bandwidth of PIN photodiodes under non-uniform illumination conditions are investigated. An absorption region is divided into the number of arbitrary layers and the continuity equations for each layer are solved with assuming that the carrier’s drift velocity is constant in each layer. Also the impact of transit time and capacitive effects of bandwidth were studied with considering the bias voltage, width of absorption region and temperature. The results show that with considering the capacitive effects, the bandwidth is increased by increase in temperature and bias voltage. We observe the effect of incident optical radiation from two n and p sides and also its impact on bandwidth and quantum efficiency. The results show more impact of radiation from n region compared to p region.

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Authors and Affiliations

  1. Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran

    Roshanak Alizade

  2. Department of Electrical Engineering, Lahijan Branch, Islamic Azad University, Lahijan, Iran

    Abbas Ghadimi

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  1. Roshanak Alizade
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  2. Abbas Ghadimi
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Correspondence to Abbas Ghadimi.

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Alizade, R., Ghadimi, A. The study of quantum efficiency in PIN photodiodes in terms of temperature and capacitive effects under non-uniform illumination conditions. Opt Quant Electron 51, 16 (2019). https://doi.org/10.1007/s11082-018-1728-1

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