Abstract
This work presents a non-equilibrium Green’s function (NEGF) based simulation of a green nitride multi-quantum well light emitting diode (LED). A carrier–carrier scattering model based on the Büttiker approach is implemented for LEDs, which has some challenges due to the bipolar nature of the device, large bandgap of nitride devices and non-equilibrium conditions. It is shown that the implemented model, which uses two sets of probe Fermi levels, represents the physics of carrier–carrier scattering in an LED. The simulations provide insight into transport phenomena like tunnelling, hot carriers, back-scattering and accurate DOS in quantized regions. In addition, it is shown that the electron density in the quantum wells is divided into bulk and quantized populations and that the bulk population in the quantum well region does not follow an analytical equilibrium quantum well model.
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The authors would like to thank DFG, OSRAM and CINSaT for funding. Computational resources of the HRZ Darmstadt and ITS Kassel are acknowledged.
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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’ 17.
Guest edited by Matthias Auf der Maur, Weida Hu, Slawomir Sujecki, Yuh-Renn Wu, Niels Gregersen, Paolo Bardella.
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Shedbalkar, A., Witzigmann, B. Non equilibrium Green’s function quantum transport for green multi-quantum well nitride light emitting diodes. Opt Quant Electron 50, 67 (2018). https://doi.org/10.1007/s11082-018-1335-1
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DOI: https://doi.org/10.1007/s11082-018-1335-1