Abstract
GaN-based light-emitting diodes (LEDs) are able to emit photons of higher energy than the injected electrons, resulting in an above-unity electrical efficiency. This phenomenon is generally attributed to heat extraction from the crystal lattice. In good agreement with measurements, we investigate the microscopic mechanism and the magnitude of such electroluminescent cooling by advanced numerical simulation including all relevant heat transfer mechanisms. Peltier cooling near the InGaN light-emitting layer is found to reduce the internal LED temperature rise significantly.
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Auf der Maur, M., Galler, B., Pietzonka, I., Strassburg, M., Lugauer, H., Di Carlo, A.: Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes. Appl. Phys. Lett. 105, 133504 (2015)
Galler, B.T.: Ph.D. Thesis, Albert Ludwigs University, Freiburg, Germany, 2014 (in German)
Han, P., Jin, K., Zhou, Y.-L., Lu, H.-B., Yang, G.-Z.: Numerical designing of semiconductor structure for optothermionic refrigeration. J. Appl. Phys. 101, 014506 (2007)
Heikkilä, O., Oksanen, J., Tulkki, J.: The challenge of unity wall plug efficiency: the effects of internal heating on the efficiency of light emitting diodes. J. Appl. Phys. 107, 033105 (2010)
Hurni, C.A., David, A., Cich, M.J., Aldaz, R.I., Ellis, B., Huang, K., Tyagi, A., DeLille, R.A., Craven, M.D., Steranka, F.M., Krames, M.R.: Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation. Appl. Phys. Lett. 106, 031101 (2015)
Lee, K.C., Yen, S.T.: Photon recycling effect on electroluminescent refrigeration. J. Appl. Phys. 111, 014511 (2012)
Lehovec, K., Accardo, C.A., Jamgochian, E.: Light emission produced by current injected into a green silicon-carbide crystal. Phys. Rev. 89, 20–25 (1953)
Pipe, K.P., Ram, R.J., Shakouri, A.: Bias-dependent Peltier coefficient and internal cooling in bipolar devices. Phys. Rev. 66, 125316 (2002)
Piprek, J.: Semiconductor Optoelectronic Devices—Introduction to Physics and Simulation. Academic Press, San Diego (2003)
Sztein, A., Haberstroh, J., Bowers, J.E., DenBaars, S.P., Nakamura, S.: Calculated thermoelectric properties of InxGal − xN, InxAl1 − xN, and AlxGa1 − xN. J. Appl. Phys. 113, 183707 (2013)
Weisbuch, C., Piccardo, M., Martinelli, L., Iveland, J., Peretti, J., Speck, J.S.: The efficiency challenge of nitride light-emitting diodes for lighting. Phys. Status Solidi A 212, 899–913 (2015)
Xue, J., Zhao, Y., Oh, S.-H., Herrington, W.F., Speck, J.S., DenBaars, S.P., Nakamura, S., Ram, R.J.: Thermally enhanced blue light-emitting diode. Appl. Phys. Lett. 107, 121109 (2015)
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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices 2016.
Guest edited by Yuh-Renn Wu, Weida Hu, Slawomir Sujecki, Silvano Donati, Matthias Auf der Maur and Mohamed Swillam.
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Piprek, J., Li, ZM. Electroluminescent cooling mechanism in InGaN/GaN light-emitting diodes. Opt Quant Electron 48, 472 (2016). https://doi.org/10.1007/s11082-016-0729-1
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DOI: https://doi.org/10.1007/s11082-016-0729-1