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FLUKA Simulations of DPA in 6H–SiC Reactor Blanket Material Induced by Different Radiation Fields Frequently Mentioned in Literature

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Abstract

Silicon carbide (SiC) is used extensively for the production of high-tech semiconductor devices. Today the use of this material in radiation environments such as fusion reactors creates excitement in the nuclear industry. Specific radiation types and energies which semiconductors were frequently exposed are of great value in terms of high-tech device studies. We used FLUKA simulation code to investigate radiation induced effects in 6H–SiC for different energetic protons, neutrons, photons and electrons in this paper. We analyzed displacement per atom values taking account of the simulation results in a very large perspective of radiation type and energy.

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Acknowledgments

This paper was supported by Ağrı İbrahim Çeçen University (Project Number: BAP/2010-F07). The authors wish to thank to Ağrı İbrahim Çeçen University.

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  1. Department of Physics, Faculty of Science and Art, Ağrı İbrahim Çeçen University, 04100, Ağrı, Turkey

    Turgay Korkut & Hatun Korkut

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  1. Turgay Korkut
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Correspondence to Hatun Korkut.

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Korkut, T., Korkut, H. FLUKA Simulations of DPA in 6H–SiC Reactor Blanket Material Induced by Different Radiation Fields Frequently Mentioned in Literature. J Fusion Energ 32, 66–70 (2013). https://doi.org/10.1007/s10894-012-9525-5

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