Abstract
Perovskite-structure Pb(Zr0.52Ti0.48)O3 ferroelectric thin films were fabricated on fluorine doped tin oxide substrate by sol–gel method and then followed by a facile hot plate annealing at low temperature of 550 °C. With the increase of the annealing residence time from 2 to 40 min, phase transformation from pyrochlore to pure perovskite occurred. The obtained films exhibited excellent transmittance in the range of the visible light. With the annealing residence time became longer, the optical band-gap of the thin films became wider. Dielectric permittivity and remnant polarization value increased with the incremental annealing residence time to 40 min and then decreased for the sample annealded for 60 min. The highest dielectric permittivity and remnant polarization were observed for the thin films annealed at 550 °C for 40 min. The values of remnant polarization and coercive field for PZT film annealed for 40 min were 40.3 µC/cm2 and 228 kV/cm, respectively.
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J.H. Chu, X.J. Meng, Ferroelectrics 352, 260 (2007)
J.F. Scott, Science 315, 954 (2007)
M. Dawber, K.M. Rabe, J.F. Scott, Rev. Mod. Phys. 77, 1083 (2005)
K. Liang, A. Buditama, D. Chien, J. Cui, P.L. Cheung, S. Goljahi, S.H. Tolbert, J.P. Chang, C.S. Lynch, J. Appl. Phys. 117, (2015)
V. Batra, C.V. Ramana, S. Kotru, Appl. Surf. Sci. 379, 191 (2016)
D. Isarakorn, D. Briand, A. Sambri, S. Gariglio, J.M. Triscone, F. Guy, J.W. Reiner, C.H. Ahn, N.F. de Rooij, Sens. Actuators B 153, 54 (2011)
N. Choudhary, D.K. Kharat, D. Kaur, Surf. Coat. Technol. 206, 1735 (2011)
Y.J. Ko, D.Y. Kim, S.S. Won, C.W. Ahn, I.W. Kim, A.I. Kingon, S.H. Kim, J.H. Ko, J.H. Jung, ACS Appl. Mater. Interfaces 8, 6504 (2016)
Z.D. Wang, Z.Q. Lai, Z.G. Hu, J. Alloys Compd. 583, 452 (2014)
S. Takenaka, H. Kozuka, Appl. Phys. Lett. 79, 3485 (2001)
C.K. Chung, C.W. Lai, B.H. Wu, J. Alloys Compd. 571, 31 (2013)
J. Chakraborty, U. Welzel, E.J. Mittemeijer, Thin Solid Films 518, 2010 (2010)
C.K. Kwok, S.B. Desu, Appl. Phys. Lett. 60, 1430 (1992)
C.C. Mardare, E. Joanni, A.I. Mardare, C.P.M. de Sa, P.B. Tavares, Thin Solid Films 483, 21 (2005)
H.F. Shi, Y.Y. Lin, G.D. Hu, T.A. Tang, Mater. Res. Bull. 40, 1544 (2005)
M.C. Rodriguez-Aranda, F. Calderon-Pinar, R. Mayen-Mondragon, J.M. Yanez-Limon, J. Mater. Sci. 26, 3486 (2015)
S. Baba, J. Akedo, Appl. Surf. Sci. 255, 9791 (2009)
Y.N. Chen, Z.J. Wang, J. Am. Ceram. Soc. 96, 90 (2013)
Z. Wang, Y. Chen, Y. Otsuka, M. Zhu, Z. Cao, H. Kokawa, J. Am. Ceram. Soc. 94, 404 (2011)
R.I. Mahdi, W.C. Gan, W.H.A. Majid, Sensors 14, 19115 (2014)
Z. Huang, Q. Zhang, R.W. Whatmore, J. Appl. Phys. 85, 7355 (1999)
Z. Huang, Q. Zhang, R.W. Whatmore, J. Appl. Phys. 86, 1662 (1999)
A. Kumar, P. Singh, N. Kulkarni, D. Kaur, Thin Solid Films 516, 912 (2008)
D.S.L. Pontes, F.M. Pontes, R.A. Capeli, M.L. Garzim, A.J. Chiquito, E. Longo, Ceram. Int. 40, 13363 (2014)
S. Li, X.L. Zhong, G.H. Cheng, X. Liu, J.B. Wang, J. Huang, H.J. Song, C.B. Tan, B. Li, Y.C. Zhou, Appl. Phys. Lett. 105, 192901 (2014)
J. Liu, H.M. Deng, L.P. Zhu, K.Z. Zhang, X.K. Meng, H.Y. Cao, P.X. Yang, J.H. Chu, Appl. Surf. Sci. 316, 78 (2014)
D. Huang, H. Deng, P. Yang, J. Chu, Mater. Lett. 64, 2233 (2010)
N. Ding, H. Deng, P. Yang, J. Chu, Mater. Lett. 82, 71 (2012)
D. Garoli, M. Natali, V. Rigato, F. Romanato, J. Vac. Sci. Technol. A 30, (2012)
S. D’Elia, M. Castriota, A. Policicchio, N. Scaramuzza, C. Versace, E. Cazzanelli, R.G. Agostino, C. Vena, G. Strangi, R. Bartolino, J. Appl. Phys. 104, 123522 (2008)
M. Adelifard, H. Eshghi, M.M.B. Mohagheghi, Bull. Mater. Sci. 35, 739 (2012)
S.M. Park, S.G. Lee, S.E. Yun, Thin Solid Films 516, 5282 (2008)
R. Singh, T.C. Goel, S. Chandra, Mater. Res. Bull. 43, 384 (2008)
B. He, Z.J. Wang, Y.N. Chen, Z.D. Zhang, J. Alloys Compd. 680, 565 (2016)
T.D. Cheng, N.J. Zhou, P. Li, J. Mater. Sci. 26, 7104 (2015)
R. Frunza, D. Ricinschi, F. Gheorghiu, R. Apetrei, D. Luca, L. Mitoseriu, M. Okuyama, J. Alloys Compd. 509, 6242 (2011)
A. Bose, M. Sreemany, Appl. Surf. Sci. 289, 551 (2014)
I. Rychetsky, J. Petzelt, T. Ostapchuk, Appl. Phys. Lett. 81, 4224 (2002)
Acknowledgements
This work was supported by the National Natural Science Foundation of China (No. 51402091, No. 51601059, No. U1304110 and No. 11404102), the scientific research foundation for new introduced doctors in Henan Normal University (No. 11114), and the National University Student Innovation Program.
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Wang, X.W., Sun, L.Y., Wang, X.E. et al. A facile hot plate annealing at low temperature of Pb(Zr0.52Ti0.48)O3 thin films by sol–gel method and their ferroelectric properties. J Mater Sci: Mater Electron 29, 5660–5667 (2018). https://doi.org/10.1007/s10854-018-8535-0
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DOI: https://doi.org/10.1007/s10854-018-8535-0