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The sputtering of AlN films on top of on- and off-axis 3C-SiC (111)/Si (111) substrates at various substrate temperatures

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Abstract

AlN thin films have been sputtered on top of the on-axis and 4° off-axis 3C-SiC (111)/Si (111) substrates at various substrate temperatures. The grazing angle incident XRD scans show that all films have major peak at (002) plane and minor peaks at (101) and (102) planes. The AlN films are further characterized in terms of the FWHM of the rocking curve, surface morphology and deposition rate. We observed that the increasing substrate temperature improve the crystal quality of the AlN (002) films, but it has minimal impact on the surface roughness and deposition rate. We also extracted the values for the bi-axial stress, the grain size and the piezoelectric coefficient. Overall, the off-axis 3C-SiC/Si (111) substrates provide a better template for the sputtering of AlN (002) films in term of better crystal quality, lower surface roughness and lower bi-axial stress.

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Acknowledgements

This work is supported by Queensland Micro- and Nanotechnology Centre (QMNC) and Griffith School of Engineering. This work was performed in part at the Queensland node of the Australian National Fabrication Facility, a company established under the National Collaborative Research Infrastructure Strategy to provide nano and microfabrication facilities for Australia’s researchers. The authors would like to acknowledge Mr. Zailan Mohd Yusof of The National University of Malaysia (Bangi) for the grazing-incident XRD measurements.

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Authors and Affiliations

  1. Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD, 4111, Australia

    A. Iqbal, G. Walker, L. Hold, P. Tanner, A. Iacopi & F. Mohd-Yasin

  2. Bluglass Ltd., 74 Asquith Street, Silverwater, NSW, 2128, Australia

    A. Fernandes

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  1. A. Iqbal
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  2. G. Walker
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  3. L. Hold
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  6. A. Iacopi
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  7. F. Mohd-Yasin
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Correspondence to F. Mohd-Yasin.

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Iqbal, A., Walker, G., Hold, L. et al. The sputtering of AlN films on top of on- and off-axis 3C-SiC (111)/Si (111) substrates at various substrate temperatures. J Mater Sci: Mater Electron 29, 2434–2446 (2018). https://doi.org/10.1007/s10854-017-8163-0

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