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A superior interfacial reliability of Fe–Ni UBM during high temperature storage

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Abstract

Ball shear test was conducted on the SnAgCu/Fe–Ni solder joints, as well as SnAgCu/Cu for comparison after reflow and 150 °C high temperature storage following the industrial JEDEC standards. According to microstructural observation, Fe–Ni UBMs show better diffusion barrier effect than Cu UBM, which form very thin FeSn2 or FeSn2+(Cu,Ni)6Sn5 layers at the interface without any Kirkendall voids. With such thin IMC layers, the shear strengths of Fe–Ni solder joints were comparable to Cu solder joints, which are in the range of 6.3–6.4 mg/μm2 after reflow and then fall into 4.7–5.1 mg/μm2 after 1000 h storage. Statistic observations revealed four kinds of fracture mode among failed solder joints, which are ductile fracture, brittle fracture, UBM fracture and pad lift respectively. The UBM fracture is the most common failure mode for Cu solder joint due to the fast consumption and low mechanical strength of Cu UBM, while the ductile failure takes the majority for Fe–Ni UBMs although it gradually turned into brittle fracture later as the aging time increased. The related mechanism of fracture behavior was also discussed concerning the physical properties of interfacial IMCs. Combining the low IMC growth rate, the comparable shear strength and the ductile fracture mode, Fe–45Ni UBM is superior to Cu UBM on the interfacial reliability of high temperature storage.

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Acknowledgements

We gratefully acknowledge the technical support from Jiangyin Changdian advanced packaging Co. Ltd (JCAP) for the preparation of solder joints and ball shear test, as well as the financial support from the Natural Science Foundation of China (Grant No. 51401218) and the Major National Science and Technology Program of China (Grant No. 2011ZX02602).

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Authors and Affiliations

  1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China

    Li-Yin Gao, Cai-Fu Li, Peng Wan & Zhi-Quan Liu

  2. Univesity of Chinese Academy of Sciences, Beijing, 100049, China

    Li-Yin Gao, Peng Wan & Zhi-Quan Liu

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  1. Li-Yin Gao
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  2. Cai-Fu Li
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  3. Peng Wan
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Correspondence to Cai-Fu Li or Zhi-Quan Liu.

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Gao, LY., Li, CF., Wan, P. et al. A superior interfacial reliability of Fe–Ni UBM during high temperature storage. J Mater Sci: Mater Electron 28, 8537–8545 (2017). https://doi.org/10.1007/s10854-017-6576-4

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  • DOI: https://doi.org/10.1007/s10854-017-6576-4

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