Abstract
Thin films of copper selenide have been deposited by spraying a mixture of aqueous solutions (0.50 M) of copper chloride hydrate (CuCl2·2H2O) and selenourea [H2NC(Se)NH2] on preheated fluorine doped tin oxide coated glass substrates at various substrate temperatures. The cell configurations copper selenide/0.5 M K2SO4/C are used for studying the capacitance–voltage (C–V) characteristics in the dark, current–voltage (I–V) characteristics in dark and under illumination, photovoltaic power output and spectral response characteristics of the as deposited films. Photoelectrochemical study records that as deposited copper selenide thin films are of p-type. The spectral response characteristics of the films at room temperature show a prominent, sharp peak at 550 nm. The measured values of efficiency (η) and fill factor (FF) are found to be 0.99 % and 0.51 respectively for film deposited at 350 °C.
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Acknowledgments
Dr. A. A. Yadav is grateful to the Science and Engineering Research Board, Department of Science and Technology, New Delhi, India for the financial assistance through the Project under SERC Fast Track Scheme for Young Scientist (File No. SB/FTP/PS-068/2013).
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Yadav, A.A. Photoelectrochemical studies on spray deposited copper selenide thin films. J Mater Sci: Mater Electron 25, 3096–3102 (2014). https://doi.org/10.1007/s10854-014-1989-9
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DOI: https://doi.org/10.1007/s10854-014-1989-9