Abstract
This paper proposes a new model for the longitudinal piezoelectric coefficient (LPC) measurement of the aluminum nitride (AlN) thin film on (100) Si substrate, the AlN thin film is fabricated by the direct-current magnetron sputtering and the piezoelectricity of the AlN thin film is measured by the piezoresponse force microscopy (PFM) in contact mode. In this model, the electric field distribution is taken into account, and the electrostriction displacement caused by the local field concentration is excluded from the measured displacement by the PFM. A LPC value of 4.22 ± 0.34 pm/V is obtained for the clamped AlN thin film by this model, and the deviation between this value and that measured under homogenous field condition is <5.7 %. Therefore, it is reasonable to apply our model to the piezoelectricity characterization of AlN thin films when using the PFM. Furthermore, piezoelectricity of other thin films could also be characterized using this model, which could simplify the measurement process.
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Acknowledgments
This work was funded by the Natural Science Foundation of China (No. 11034007, 61102023) and the National High Technology Research and Development Program of China (No. 2012AA040503). The authors are grateful to the reviewers for the suggestion and revision of this paper. The authors are grateful to the reviewers for the suggestion and revision of this paper.
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Bi, X., Wu, Y., Wu, J. et al. A model for longitudinal piezoelectric coefficient measurement of the aluminum nitride thin films. J Mater Sci: Mater Electron 25, 2435–2442 (2014). https://doi.org/10.1007/s10854-014-1885-3
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DOI: https://doi.org/10.1007/s10854-014-1885-3