Abstract
Pb(Zr0.53Ti0.47)O3 (PZT) thin films were prepared on Pt/Ti/SiO2/Si substrate by sol–gel method. The effect of annealing temperature on microstructure, ferroelectric and dielectric properties of PZT films was investigated. When the films were annealed at 550–850 °C, the single-phase PZT films were obtained. PZT films annealed at 650–750 °C had better dielectric and ferroelectric properties. The sandwich composites with epoxy resin/PZT film with substrate/epoxy resin were prepared. The annealing temperature of PZT films influenced their damping properties, and the epoxy-based composites embedded with PZT film annealed at 700 °C had the largest damping loss factor of 0.923.
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Acknowledgments
This work was financed by the International Science and Technology Cooperation Program of China (Grant No. 2009DFB50470) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 50902108).
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Guo, D., Mao, W., Qin, Y. et al. Damping properties of epoxy-based composite embedded with sol–gel-derived Pb(Zr0.53Ti0.47)O3 thin film annealed at different temperatures. J Mater Sci: Mater Electron 23, 940–944 (2012). https://doi.org/10.1007/s10854-011-0524-5
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DOI: https://doi.org/10.1007/s10854-011-0524-5