Skip to main content
SpringerLink
Log in

Fabrication and comparative study of top-gate and bottom-gate ZnO–TFTs with various insulator layers

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

Transparent ZnO thin film transistors (ZnO–TFTs) with different structures and dielectric layers were fabricated by rf magnetron sputtering. The PbTiO3, AlO x , SiN x and SiO x films were attempted to serve as the gate dielectric layers in the devices, respectively, and XRD was employed to investigate the crystal structure of ZnO films deposited on these dielectric layers. The optical properties of transparent TFTs were measured and revealed the average transmittance ranged from 60 to 80% in the visible part of the spectrum. Electrical measurement shows the properties of the ZnO–TFTs have great relations with the device structure. The bottom-gate TFTs have better behaviors than top-gate ones with the mobility, threshold voltage and the current on/off ratio of 18.4 cm2 V−1 s−1, −0.7 V and 104, respectively. The electrical difference of the devices may be due to different character of the interface between the channel and dielectric layers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7

Similar content being viewed by others

References

  1. S. Wagner, H. Gleskova, I.C. Cheng, M. Wu, Thin Solid Films 430, 15 (2003)

    CAS  Google Scholar 

  2. N. Kenji, O. Hiromichi, U. Kazushige, K. Toshio, H. Masahiro, H. Hideo, Microelectron. Eng. 72, 294 (2004)

    Article  Google Scholar 

  3. F.D. Angelis, T. Toccoli, A. Pallaoro, N. Coppede, L. Mariucci, G. Fortunato, S. Iannotta, Synthetic. Met. 146, 291 (2004)

    Article  Google Scholar 

  4. R. Navamathavan, E.J. Yang, J.H. Lim, D.K. Hwang, J.Y. Oh, J.H. Yang, J.H. Jang, S.J. Park, J. Electrochem. Soc. 153, 5–G385 (2006)

    Article  Google Scholar 

  5. K.T. Kang, M.H. Lim, H.G. Kim II, D. Kim, J.M. Hong, Appl. Phys. Lett. 90, 043502 (2007)

    Article  ADS  Google Scholar 

  6. K. Lee, J.H. Kim, S. Lm, C.S. Kim, H.K. Baik, Appl. Phys. Lett. 89, 13357 (2006)

    Google Scholar 

  7. A. Sasaki, W. Hara, A. Matsuda, N. Tateda, S. Otaka, S. Akiba, K. Saito, T. Yodo, M. Yoshimoto, Appl. Phys. Lett. 86, 231911 (2005)

    Article  ADS  Google Scholar 

  8. V. Vaithianathan, B.T. Lee, S.S. Kim, J. Appl. Phys. 98, 043519 (2005)

    Article  ADS  Google Scholar 

  9. H.S. Bae, S. Im, Thin Solid Films 469–470, 75 (2004)

    Article  Google Scholar 

  10. S. Kandasamy, W. Wlodarski, A. Holland, S. Nakagomi, Y. Kokubun, Appl. Phys. Lett. 90, 064103 (2007)

    Article  ADS  Google Scholar 

  11. D. Bao, X. Yao, K. Shinozaki et al., J. Phys. D. Appl. Phys. 36, 2141–2145 (2003)

    Article  CAS  ADS  Google Scholar 

  12. T. Matsuda, M. Furuta, T. Hiramatsu, C. Li, H. Furuta, H. Hokari, T. Hirao, J. Cryst. Growth 310, 31 (2008)

    Article  CAS  ADS  Google Scholar 

  13. K.S. Son, D.L. Choi, H.N. Lee, W.G. Lee, Curr. Appl. Phys. 2, 229 (2002)

    Article  Google Scholar 

  14. O. Vigil, F. Cruz, G. Santana, L. Vaillant, A.M. Acevedo, G.C. Puente, Appl. Surf. Sci. 161, 27 (2000)

    Article  CAS  ADS  Google Scholar 

  15. S. Masuda, K. Kitamura, Y. Okumura et al., J. Appl. Phys. 93, 1624 (2003)

    Article  CAS  ADS  Google Scholar 

  16. B. Yaglioglu, H.Y. Yeom, R. Beresford et al., Appl. Phys. Lett. 89, 062103 (2006)

    Article  ADS  Google Scholar 

  17. E.M.C. Fortunato, P.M.C. Barquinha, A. Pimentel et al., Appl. Phys. Lett. 85, 2541 (2004)

    Article  CAS  ADS  Google Scholar 

  18. R. Martins, P. Barquinha, I. Ferreira et al., J. Appl. Phys. 101, 044505 (2007)

    Article  ADS  Google Scholar 

  19. A.J. Snell, K.D. Mackenzie, W.E. Spear et al., Appl. Phys. 24, 357 (1981)

    Article  CAS  ADS  Google Scholar 

  20. E. Fortunato, P. Barquinha, A. Pimentel et al., Thin Solid Films 487, 205 (2005)

    Article  CAS  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. School of Physics and Electronics, Henan University, 475001, Kaifeng, People’s Republic of China

    XinAn Zhang, WeiFeng Zhang & Xun Hou

  2. Key Laboratory of Photonics Technology for Information, Xi’an Jiaotong University, 710049, Xi’an, People’s Republic of China

    XinAn Zhang, JingWen Zhang & Xun Hou

Authors
  1. XinAn Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. JingWen Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. WeiFeng Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Xun Hou
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to WeiFeng Zhang.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zhang, X., Zhang, J., Zhang, W. et al. Fabrication and comparative study of top-gate and bottom-gate ZnO–TFTs with various insulator layers. J Mater Sci: Mater Electron 21, 671–675 (2010). https://doi.org/10.1007/s10854-009-9975-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-009-9975-3

Keywords

Search

Navigation