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Structure properties of carbon implanted silicon layers

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Abstract

In this paper, the composition and structure of homogeneous silicon carbide layers produced by multiple implantation of 40-, 20-, 10-, 5- and 3-keV carbon ions into silicon were studied by transmission electron microscopy, X-ray diffraction, Auger spectroscopy, IR spectroscopy and Atomic force microscopy. After high temperature annealing the homogeneous, fine-grained, polycrystalline SiC0.95 and SiC1.4 films consists of globular or plate-like grains are obtained. The intensive translations of atoms during annealing at 800–1400 °C are taken place causing the deformation of the layer surface and the formation of grains with sizes ∼30–100 nm. The grains consist of chaotically oriented SiC crystallites with average sizes ∼5 nm. The temperature dependences of IR spectra parameters are evidence of similarity of carbon and silicon-carbon clusters types in SiC0.95 and SiC1.4 layers. An influence of carbon- and silicon-carbon clusters prevailed in as-implanted layer on the crystallization processes in silicon layers with high carbon concentration, are considered.

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Acknowledgments

The authors would like to thank the Ministry of Education and Science of Republic of Kazakhstan for the financial support by grant.

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Authors and Affiliations

  1. Institute of Physics and Technology of Ministry of Education and Science, Almaty, 060032, Republic of Kazakhstan

    K. Kh. Nussupov, N. B. Beisenkhanov, I. V. Valitova, K. A. Mit’, D. M. Mukhamedshina & E. A. Dmitrieva

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  1. K. Kh. Nussupov
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  2. N. B. Beisenkhanov
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  3. I. V. Valitova
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  4. K. A. Mit’
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  5. D. M. Mukhamedshina
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  6. E. A. Dmitrieva
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Correspondence to N. B. Beisenkhanov.

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Nussupov, K.K., Beisenkhanov, N.B., Valitova, I.V. et al. Structure properties of carbon implanted silicon layers. J Mater Sci: Mater Electron 19 (Suppl 1), 254–262 (2008). https://doi.org/10.1007/s10854-007-9533-9

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  • DOI: https://doi.org/10.1007/s10854-007-9533-9

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