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High boron incorporation in selective epitaxial growth of SiGe layers

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Abstract

Incorporation of high amount of boron in the range of 1 × 1020–1 × 1021 cm−3 in selective epitaxial growth (SEG) of Si1 − xGex (x = 0.15–0.315) layers for recessed or elevated source/drain junctions in CMOS has been studied. The effect of high boron doping on growth rate, Ge content and appearance of defect in the epi-layers was investigated. In this study, integration issues were oriented towards having high layer quality whereas still high amount of boron is implemented and the selectivity of the epitaxy is preserved.

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References

  1. T. Ghani et al., IEDM Tech. Digest 978 (2003)

  2. S. Thompson et al., IEEE Trans Electron Devices. 51, 1790 (2004)

    Article  Google Scholar 

  3. S. Gannavaram, N. Pesovic, C. Ozturk, International Electron Devices Meeting 2000. Technical Digest. IEDM, 437 (2000)

  4. C. Isheden, J. Seger, H.H. Radamson, S.-L. Zhang, M. Ostling, Mater. Res. Soc. Symp. Proc. 745, 117 (2003)

    CAS  Google Scholar 

  5. S. Bodnar, E. de Berranger, P. Bouillon, M. Mouis, T. Skotnicki, J.L. Regolini, J. Vac. Sci. Tech. B. 15, 712 (1997)

    Article  CAS  Google Scholar 

  6. K.P. Giannakopoulos, S. Roth, M. Burghammer, C. Fellous, D. Richard, D. Dutartre, J. Appl. Phys. 93, 259 (2003)

    Article  CAS  Google Scholar 

  7. J. Hallstedt, E. Suvar, C. Menon, P.-E. Hellström, M. Östling, H.H. Radamson, Mat. Sci. Eng. B: Solid-State Mater Adv Tech. 109, 122 (2004)

    Google Scholar 

  8. J.M. Hartmann, L. Clavelier, C. Jahan, P. Holliger, G. Rolland, T. Billon, C. Defranoux, J. Cryst. Growth. 264, 36 (2004)

    Article  CAS  Google Scholar 

  9. P.F. Fewster, N.L. Andrew, J. Appl. Phys. 74, 3121 (1993)

    Article  CAS  Google Scholar 

  10. H.H. Radamson, M.R. Jr Sardela, L. Hultman, G.V. Hansson, J. Appl. Phys. 76, 763 (1994)

    Article  CAS  Google Scholar 

  11. B. Mehta, M. Tao, J. Electrochem. Soc. 152, 309 (2005)

    Article  Google Scholar 

  12. C.M. Liu, W.L. Liu, S.H. Hsieh, T.K. Tsai, W.J. Chen, Appl. Sur. Sci. 243, 259 (2005)

    Article  CAS  Google Scholar 

  13. B. Bokhonov, M. Korchagin, J. Alloys Compd. 319, 187 (2001)

    Article  CAS  Google Scholar 

  14. H.H. Radamson, K.B. Joelsson, W.X. Ni, L. Hultman, G.V. Hansson, J. Cryst. Growth. 157, 80 (1995)

    Article  CAS  Google Scholar 

  15. Y. Wang, R.J. Hamers, E. Kaxiras, Phys. Rev. Lett. 74, 403 (1995)

    Article  CAS  Google Scholar 

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Correspondence to R. Ghandi.

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Ghandi, R., Kolahdouz, M., Hållstedt, J. et al. High boron incorporation in selective epitaxial growth of SiGe layers. J Mater Sci: Mater Electron 18, 747–751 (2007). https://doi.org/10.1007/s10854-007-9121-z

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  • DOI: https://doi.org/10.1007/s10854-007-9121-z

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