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Iron and gold related defects in water quenched silicon

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Abstract

Thermally induced defects in heat-treated and then quenched in water n-silicon samples have been studied using deep level transient spectroscopy. Two deep levels at energies E c – 0.48 eV and E c – 0.25 eV are observed in high concentration. The emission rate signatures and annealing characteristics showed the DLTS signal due to level at energy position E c – 0.48 eV is not only due to Au(A) but some other level also contributes to this signal. The energy state at E c – 0.25 eV is identified to be pinned with E c – 0.48 eV. The annealing characteristics also revealed the contribution of Au–Fe complex in DLTS signal of E c – 0.25 eV level. A complementary behavior of these two levels in annealing characteristics has also been observed.

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References

  1. E.R. Weber, Appl. Phys. A 30, 1 (1983)

    Article  Google Scholar 

  2. D. Macdonald, L.J. Geerligs, Appl. Phys. Lett. 85, 4061 (2004)

    Article  CAS  Google Scholar 

  3. S. Tanaki, H. Kitagawa, Jpn. J. Appl. Phys. 37, 4656 (1998)

    Article  Google Scholar 

  4. A. Ali, U.S. Qurashi, M. Zafar Iqbal, N. Zafar, Semicond. Sci. Technol. 12, 1100 (1997)

    Article  CAS  Google Scholar 

  5. A.A. Istratov, H. Hieslmair, E.R. Weber, Appl. Phys. A 70, 489 (2000)

    Article  CAS  Google Scholar 

  6. L.J. Geerligs, D. Macdonald, Appl. Phys. Lett. 85, 5227 (2004)

    Article  CAS  Google Scholar 

  7. S.D. Brotherton, P. Bradley, A. Gill, E.R. Weber, J. Appl. Phys. 55, 952 (1984)

    Article  CAS  Google Scholar 

  8. J. Bailey, E.R. Weber, Phys. Stat. Sol(a) 137, 515 (1993)

    Article  CAS  Google Scholar 

  9. D. Gilles, E.R. Weber, S. Hahn, Phys. Rev. Lett. 64, 196 (1990)

    Article  CAS  Google Scholar 

  10. A.A. Istratov, H. Hieslmair, E.R. Weber, Appl. Phys. A 69, 13 (1999)

    Article  CAS  Google Scholar 

  11. SIA, International technology roadmap for semiconductors, http://www.itrs.net/ntrs/publntrs.nsf, http:// www.sematech.org

  12. A. Ali, M. Zafar Iqbal, N. Baber, J. Appl. Phys. 77, 5572 (1995)

    Article  CAS  Google Scholar 

  13. D.V. Lang, J. Appl. Phys. 45, 3023 (1974)

    Article  CAS  Google Scholar 

  14. A. Fazzio, M.J. Caldas, A. Zunger, Phys. Rev. B 32, 934 (1985)

    Article  CAS  Google Scholar 

Download references

Acknowledgements

Pakistan Science Foundation, Higher education commission and Quaid-i-Azam University Pakistan provided partial support to execute this project.

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Authors and Affiliations

  1. Advance Materials Physics Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad, 45320, Pakistan

    Akbar Ali, Abdul Majid & M. N. Saleh

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  1. Akbar Ali
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  2. Abdul Majid
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  3. M. N. Saleh
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Correspondence to Akbar Ali.

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Ali, A., Majid, A. & Saleh, M.N. Iron and gold related defects in water quenched silicon. J Mater Sci: Mater Electron 18, 421–425 (2007). https://doi.org/10.1007/s10854-006-9043-1

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  • DOI: https://doi.org/10.1007/s10854-006-9043-1

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