Abstract
Vanadium dioxide (VO2) has been shown to undergo an abrupt electronic phase transition near 70 °C from a semiconductor to a metal, with an increase in dc conductivity of over three orders of magnitude, making it an interesting candidate for advanced electronics as well as fundamental research in understanding correlated electron systems. Recent experiments suggest that this transition can be manifested independent of a structural phase transition in the system, and that it can be triggered by the application of an electric field across the VO2 thin film. Several experiments that have studied this behavior, however, also involve a heating of the VO2 channel by leakage currents, raising doubts about the underlying mechanism behind the transition. To address the important question of thermal effects due to the applied field, we report the results of electro-thermal simulations on a number of experimentally realized device geometries, showing the extent of heating caused by the leakage current in the “off” state of the VO2 device. The simulations suggest that in a majority of the cases considered, Joule heating is insufficient to trigger the transition by itself, resulting in a typical temperature rise of less than 10 K. However, the heating following a field-induced transition often also induces the structural transition. Nevertheless, for certain devices, we identify the possibility of maintaining the field-induced high conductivity phase without causing the structural phase transition: an important requirement for the prospect of making high-speed switching devices based on VO2 thin film structures. Such electronically driven transitions may also lead to novel device functionalities including ultra-fast sensors or gated switches incorporating ferroelectrics.
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References
Morin FJ (1959) Phys Rev Lett 3:34
Zylbersztejn A, Mott NF (1975) Phys Rev 11:4383
Berglund CN, Guggenheim HJ (1969) Phys Rev 185:1022
Mott NF (1990) Metal-insulator transition. Taylor and Frances, London
Goodenough JB (1971) J Solid State Chem 3:490
Imada M et al (1998) Rev Mod Phys 70:1039
Cavalleri A et al (2001) Phys Rev Lett 87:237401
Cavalleri A et al (2004) Phys Rev B 70:161102
Xu S et al (2004) J Mater Sci 39:489. doi:https://doi.org/10.1023/B:JMSC.0000011503.22893.f4
Stefanovich G et al (2000) J Phys Condens Matter 12:8837
Boriskov PP et al (2002) Tech Phys Lett 28:406
Kim HT et al (2004) New J Phys 6:52
Watanabe Y (1995) Appl Phys Lett 66:1770
Mathews S et al (1997) Science 276:238
Kim HT et al (2006) Phys Rev Lett 97:266401
Kim BJ et al (2008) Phys Rev B 77:235401
Sakai J, Kurisu M (2008) Phys Rev B 78:033106
Lee JS et al (2007) Appl Phys Lett 90:015907
Lee JS et al (2007) Appl Phys Lett 91:133509
Samsonov GV (1987) The oxide handbook. IFI/Plenum, New York
Kim HT et al (2005) Appl Phys Lett 86:242101
Okimura K, Sakai J (2007) Jpn J Appl Phys 46:813
Berglund CN (1969) IEEE Trans Electron Devices 16:432
Duchene J et al (1971) Appl Phys Lett 19:115
Chae BG et al (2004) J Korean Phys Soc 44:884
Youn DH et al (2004) J Appl Phys 95:1407
Kim BJ et al (2007) Appl Phys Lett 90:023515
Ruzmetov D et al (2008) Phys Rev B 77:195442
Ko C, Ramanathan S (2008) Appl Phys Lett 93:252101
Lasance C, Moffat C (2005) Elec Cool 11:4
Mlyuka NR, Kivaisi RT et al (2006) J Mater Sci 41:5619. doi:https://doi.org/10.1007/s10853-006-0261-y
Acknowledgements
This work was supported by AFRL-WPAFB and NSF-SIA Supplement to the Nanoscale Science and Engineering Initiative under NSF Award Number PHY-0601184. Device fabrication was performed, in part, at the Harvard University Center for Nanoscale Systems (CNS), a member of the National Nanotechnology Infrastructure Network (NNIN), which is supported by NSF Award No. ECS-0335765.
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Gopalakrishnan, G., Ruzmetov, D. & Ramanathan, S. On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects. J Mater Sci 44, 5345–5353 (2009). https://doi.org/10.1007/s10853-009-3442-7
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DOI: https://doi.org/10.1007/s10853-009-3442-7