Abstract
A simplified RC circuit is used to simulate effects of ionizing particles in a 90 nm SRAM. The main characteristics of the memory cell bit flip are discussed and a SEU criterion is presented. The effect of the surrounded circuit on the struck transistor is also discussed in order to extract parameters characteristic of the SEU occurrence.
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We thank Austin Lesea, from Xilinx, San José, USA for his help in this work.
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Castellani-Coulié, K., Aziza, H., Micolau, G. et al. Optimization of SEU Simulations for SRAM Cells Reliability under Radiation. J Electron Test 28, 331–338 (2012). https://doi.org/10.1007/s10836-012-5281-8
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DOI: https://doi.org/10.1007/s10836-012-5281-8