Abstract
A new structure with a Gaussian doping distribution along the channel region is proposed to improve the performance of tunneling carbon nanotube field-effect transistors (T-CNTFETs). The new structure involves a Gaussian doping distribution in the channel region with a low level of doping at the sides that gradually increases towards the middle of the channel. The source doping is p-type, while the doping in the drain and channel regions is n-type. The doping distribution is uniform in the drain/source regions. To simulate the behavior of T-CNTFETs, the Poisson and Schrödinger equations are solved self-consistently using the nonequilibrium Green’s function formalism. The simulation results show that the proposed structure exhibits increased saturation current but decreased OFF-state current compared with the conventional structure (C-T-CNTFET), yielding a ~ 104 times higher current ratio for a gate length of 20 nm. The proposed structure also shows improvements in parameters such as the transconductance, gate capacitance, cutoff frequency, and delay compared with the conventional structure and can be considered to be a more appropriate option for different applications.
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References
Pulfrey, D.L., Chen, L.: Comparison of p-i-n and n-i-n carbon nanotube FETs regarding high-frequency performance. Solid-State Electron. 53, 935–939 (2009)
Wang, H., Chang, S., Hu, Y., He, H., He, J., Huang, Q., He, F., Wang, G.: A novel barrier controlled tunnel FET. IEEE Electron. Device. Lett. 35, 798–800 (2014)
Jamalabadi, Z., Keshavarzi, P., Naderi, A.: Sdc-Cntfet: stepwise doping channel design in carbon nanotube field effect transistors for improving short channel effects immunity. Int. J. Mod. Phys B. 28, 1450048 (2014)
Choi, W., Park, B.G., Lee, J.D., Liu, T.: Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron. Device Lett. 28, 743–745 (2007)
Abdi-Tahne, B., Naderi, A.: SLD-MOSCNT: a new MOSCNT with step–linear doping profile in the source and drain regions. Int. J. Mod. Phys B. 31, 1650242 (2017)
Naderi, A., Keshavarzi, P., Orouji, A.A.: LDC-CNTFET: a carbon nanotube field effect transistor with linear doping profile channel. Superlattices Microstruct. 50, 145–156 (2011)
Naderi, A., Abdi-Tahne, B.: Methods in improving the performance of carbon nanotube field effect transistors. ECS J. Solid State Sci. Technol. 5, M131–M140 (2016)
Pourfath, M., Kosina, H., Selberherr, S.: Tunneling CNTFETs. J. Comput. Electron. 6, 243–246 (2007)
KhademHosseini, V., Dideban, D., Ahmadi, M.T., Ismail, R.: An analytical approach to model capacitance and resistance of capped carbon nanotube single electron transistor. AEU-Int. J. Electr. Commun. 90, 97–102 (2018)
Singh, A., Khosla, M., Raj, B.: Design and analysis of electrostatic doped Schottky barrier CNTFET based low power SRAM. AEU-Int. J. Electr. Commun. 80, 67–72 (2017)
Naderi, A., Ahmadmiri, S.A.: Attributes in the performance and design considerations of asymmetric drain and source regions in carbon nanotube field effect transistors: quantum simulation study. ECS J. Solid State Sci. Technol. 5, M63–M68 (2016)
Hailiang, Z., Yue, H., Minxuan, Z.: Numerical study of the sub-threshold slope in T-CNFETs. J. Semicond. 31, 094005 (2010)
Koswatta, S.O., Nikonov, D.E., Lundstrom, M.S.: Computational study of carbon nanotube pin tunnel FETs. In: Electron Devices Meeting. IEDM Technical Digest. IEEE International, pp. 518–521 (2005)
Lee, M.J., Choi, W.Y.: Effects of device geometry on hetero-gate-dielectric tunneling field-effect transistors. IEEE Electron. Device Lett. 33, 1459–1461 (2012)
Naderi, A., Keshavarzi, P.: The effects of source/drain and gate overlap on the performance of carbon nanotube field effect transistors. Superlattices Microstruct. 52, 962–976 (2012)
Yousefi, R., Saghafi, K., Moravvej-Farshi, M.K.: Numerical study of lightly doped drain and source carbon nanotube field effect transistors. IEEE Trans. Electron. Devices. 57, 765–771 (2010)
Sepehri, A., Pincak, R.: Modeling the electron transport in nanostructures by using the concept of bions in M-theory. Int J Theor. Phys. 55, 4577–4594 (2016)
Rashidian, Z., Kheirandish, F.: Graphene-based normal/ferromagnetic/normal junction as a polarizer. Int. J. Theor. Phys. 51, 1989–1996 (2012)
Yongmei, Z.: Transport properties of a nonequilibrium quantum dot connected to ferromagnetic leads. Int. J. Theor. Phys. 56, 841–850 (2017)
Anvarifard, M.K.: Modeling a double-halo-doping carbon nanotube FET in DC and AC operations. ECS J. Solid State Sci. Technol. 7, M209–M216 (2018)
Akbari-Eshkalak, M., Anvarifard, M.K.: A guideline for achieving the best electrical performance with strategy of halo in graphene nanoribbon field effect transistor. ECS J. Solid State Sci. Technol. 5, M141–M147 (2016)
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The authors acknowledge Kermanshah University of Technology for financial support of this research under grant no. S/P/T/1191.
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Naderi, A., Ghodrati, M. & Baniardalani, S. The use of a Gaussian doping distribution in the channel region to improve the performance of a tunneling carbon nanotube field-effect transistor. J Comput Electron 19, 283–290 (2020). https://doi.org/10.1007/s10825-020-01445-1
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DOI: https://doi.org/10.1007/s10825-020-01445-1