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The impact of vacancy defects on the performance of a single-electron transistor with a carbon nanotube island

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Abstract

The single-electron transistor (SET) principle of operation is based on the Coulomb blockade (CB) phenomenon. The island material and associated defects have a direct impact on the range of the CB effect and the operating speed of the SET. In this research, the impact of vacancy defects on a SET-based on a carbon nanotube (CNT) is investigated. The results show that a SET with six atomic vacancies exhibits the lowest Coulomb diamond area and highest operating speed. The results also show that increasing the distance between two single vacancies decreases the Coulomb diamond area of the SET. Moreover, the location of the vacancies in the CNT and its effect on the operation of the SET are investigated. The comparison study shows that an antidote vacancy in the CNT close to the drain side results in the shortest CB range and narrowest bandgap, resulting in the CNT SET with the highest operating speed.

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Acknowledgements

This research was supported by the University of Kashan under the supervision of Dr. Daryoosh Dideban. The authors also thank the Research Management Center (RMC) of Universiti Teknologi Malaysia (UTM) for providing an excellent research environment for this simulation research using Atomistix ToolKit and to complete this work.

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Authors and Affiliations

  1. Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan, Iran

    Vahideh Khademhosseini & Daryoosh Dideban

  2. Department of Electrical and Computer Engineering, University of Kashan, Kashan, Iran

    Daryoosh Dideban

  3. Physics Department, Nanotechnology Research Center, Urmia University, Urmia, Iran

    Mohammad Taghi Ahmadi

  4. Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Johor Bahru, Johor, Malaysia

    Mohammad Taghi Ahmadi & Razali Ismail

Authors
  1. Vahideh Khademhosseini
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  2. Daryoosh Dideban
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  3. Mohammad Taghi Ahmadi
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  4. Razali Ismail
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Correspondence to Daryoosh Dideban.

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Khademhosseini, V., Dideban, D., Ahmadi, M.T. et al. The impact of vacancy defects on the performance of a single-electron transistor with a carbon nanotube island. J Comput Electron 18, 428–435 (2019). https://doi.org/10.1007/s10825-018-01290-3

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