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Dual material gate junctionless tunnel field effect transistor

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Abstract

This paper proposes a junctionless tunnel field effect transistor (JLTFET) with dual material gate (DMG) structure and the performance was studied on the basis of energy band profile modulation. The two-dimensional simulation was carried out to show the effect of conduction band minima on the abruptness of transition between the ON and OFF states, which results in low subthreshold slope (SS). Appropriate selection of work function for source and drain side gate metal of a double metal gate JLTFET can also significantly reduce the subthreshold slope (SS), OFF state leakage and hence gives improved I ON/I OFF.

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Acknowledgements

The authors thank the University of Texas at Austin, USA, and the Ministry of Human Resource and Development, Government of India, for funding this project.

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Authors and Affiliations

  1. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, 208016, India

    Punyasloka Bal, Bahniman Ghosh, Partha Mondal, M. W. Akram & Ball Mukund Mani Tripathi

  2. Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Road, Austin, TX, 78758, USA

    Bahniman Ghosh

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  1. Punyasloka Bal
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  2. Bahniman Ghosh
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Correspondence to Punyasloka Bal.

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Bal, P., Ghosh, B., Mondal, P. et al. Dual material gate junctionless tunnel field effect transistor. J Comput Electron 13, 230–234 (2014). https://doi.org/10.1007/s10825-013-0505-4

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