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Interaction of Terahertz Pulses with Photoexcited Electron Plasmas on Semiconductor Surfaces

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Journal of Applied Spectroscopy Aims and scope

The interactions of terahertz pulses of electromagnetic radiation with optically-excited free charge carrier plasmas on the surface of semiconductors are studied. The influence of the plasma layer on the Brewster effect and total internal reflection is analyzed. It is shown that the changes in transmission and reflection caused by the electron plasma layer can be used to modulate terahertz radiation.

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Authors and Affiliations

  1. B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, 68 Nezavisimost’ Ave., Minsk, 220072, Belarus

    V. L. Malevich & G. V. Sinitsyn

  2. S. I. Vavilov State Optical Institute, St. Petersburg, Russia

    N. N. Rozanov

  3. ITMO University, St. Petersburg, Russia

    N. N. Rozanov

Authors
  1. V. L. Malevich
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  2. G. V. Sinitsyn
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  3. N. N. Rozanov
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Correspondence to V. L. Malevich.

Additional information

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 82, No. 6, pp. 899–903, November–December, 2015.

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Malevich, V.L., Sinitsyn, G.V. & Rozanov, N.N. Interaction of Terahertz Pulses with Photoexcited Electron Plasmas on Semiconductor Surfaces. J Appl Spectrosc 82, 975–979 (2016). https://doi.org/10.1007/s10812-016-0214-4

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  • DOI: https://doi.org/10.1007/s10812-016-0214-4

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