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Influence of Field Effects on the Performance of InGaAs-Based Terahertz Radiation Detectors

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Abstract

A detailed electrical characterization of high-performance bow-tie InGaAs-based terahertz detectors is presented along with simulation results. The local surface potential and tunnelling current were scanned over the surfaces of the detectors by means of Kelvin probe force microscopy (KPFM) and scanning tunnelling microscopy (STM), which also enabled the determination of the Fermi level. Current-voltage curves were measured and modelled using the Synopsys Sentaurus TCAD package to gain deeper insight into the processes involved in detector operation. In addition, we performed finite-difference time-domain (FDTD) simulations to reveal features related to changes in the electric field due to the metal detector contacts. The investigation revealed that field-effect-induced conductivity modulation is a possible mechanism contributing to the high sensitivity of the studied detectors.

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Acknowledgements

The authors would like to thank Dr. Klaus Köhler (Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg, Germany) for providing InGaAs sample II3196. This work was supported by the Research Council of Lithuania (project LAT 04/2016).

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Authors and Affiliations

  1. Center for Physical Sciences and Technology, Saulėtekio av. 3, 10257, Vilnius, Lithuania

    Linas Minkevičius, Vincas Tamošiūnas, Virginijus Bukauskas, Arūnas Šetkus, Renata Butkutė, Irmantas Kašalynas & Gintaras Valušis

  2. Faculty of Physics, Vilnius University, Saulėtekio av. 9, Bld. III, 10222, Vilnius, Lithuania

    Linas Minkevičius, Vincas Tamošiūnas, Renata Butkutė, Irmantas Kašalynas & Gintaras Valušis

  3. Institute of Applied Research, Vilnius University, Saulėtekio av. 9, Bld. III, 10222, Vilnius, Lithuania

    Martynas Kojelis & Ernestas Žąsinas

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  1. Linas Minkevičius
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  2. Vincas Tamošiūnas
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Correspondence to Linas Minkevičius.

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Minkevičius, L., Tamošiūnas, V., Kojelis, M. et al. Influence of Field Effects on the Performance of InGaAs-Based Terahertz Radiation Detectors. J Infrared Milli Terahz Waves 38, 689–707 (2017). https://doi.org/10.1007/s10762-017-0382-1

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