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Investigation of photonic band gap in a semiconductor-organic photonic crystal in ultraviolet region

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Abstract

We give a theoretical analysis of the photonic band gap in a one-dimensional semiconductor-organic photonic crystal containing a period of AlN/3-octylthiophenes (P3OT) bilayer. The band gap is investigated based on the reflectance calculated by using the transfer matrix method. It is shown that, in the ultraviolet region, there is a photonic band gap which is strongly dependent on the loss and the incident angle for the transverse electric and transverse magnetic waves. Additionally, we find the photonic band gap can be significantly widened in a ternary semiconductor-metal-organic one. The effect of distinct metal on the band gap is also illustrated.

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Authors and Affiliations

  1. Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei, 116, Taiwan

    Chien-Jang Wu & Huan-Chuen Lin

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  1. Chien-Jang Wu
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  2. Huan-Chuen Lin
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Correspondence to Chien-Jang Wu.

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Wu, CJ., Lin, HC. Investigation of photonic band gap in a semiconductor-organic photonic crystal in ultraviolet region. OPT REV 18, 338–342 (2011). https://doi.org/10.1007/s10043-011-0065-4

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  • DOI: https://doi.org/10.1007/s10043-011-0065-4

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