Abstract
We demonstrate a novel optical probing technique using the reflection-induced change in voltage of a GaAs vertical cavity surface emitting laser (VCSEL). We present the modeling and experiment of the VCSEL based probing. A two-dimensional image probing is successfully demonstrated.
References
M. Ohtsu: Near-Field Nano/Atom Optics and Technology (Springer-Verlag, 1997).
E. Betzig, J. K. Trautman, R. Wolfe, E. M. Gyorgy, P. L. Finn, M. H. Kryder and C.-H. Chang: Appl. Phys. Lett. 61 (1992) 142.
K. Goto: Jpn. J. Appl. Phys. 37 (1998) 2274.
F. Koyama, K. Goto and K. Iga: OECC’98.
S. Shinada, F. Koyama, K. Suzuki, K. Goto and K. Iga: Jpn. J. Appl. Phys., 38 (1999) L137.
A. Partovi: ISOM/ODS’99, ThC-1, 352, 1999.
H. Ukita, Y. Katagiri and S. Fujimori: Appl. Opt. 28 (1989) 4360.
J. Hashizume, S. Shinada and F. Koyama: to be published in Jpn. J. Appl. Phys.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Hashizume, J., Shinada, S., Koyama, F. et al. Reflection Induced Voltage Change of Surface Emitting Laser for Optical Probing. OPT REV 9, 186–188 (2002). https://doi.org/10.1007/s10043-002-0186-x
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s10043-002-0186-x