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Electrochemical nucleation and growth of silicon in the KF-KCl-K2SiF6 melt

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Abstract

The work related to the study of the initial stages of the silicon electrodeposition on the glassy carbon electrode in molten KF-KCl-K2SiF6 was performed. The silicon nucleation and growth process was investigated using cyclic voltammetry, chronoamperometry, and scanning electron microscopy. It was shown that the electrocrystallization process occurs by the instantaneous nucleation with diffusion-controlled growth under the studied conditions. The Scharifker-Hills theoretical model was used to calculate the nucleation density and the diffusion coefficient of depositing ions.

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Acknowledgments

This study was supported by the RFBR, research project No. 13-03-12235 ofi_m.

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Authors and Affiliations

  1. Ural Branch of the Russian Academy of Sciences, Institute of High Temperature Electrochemistry, 20 Academicheskaya Str., 620990, Ekaterinburg, Russia

    Yurii P. Zaykov, Sergey I. Zhuk, Andrey V. Isakov, Olga V. Grishenkova & Vladimir A. Isaev

  2. Ural Federal University, 19 Mira Str., 620002, Ekaterinburg, Russia

    Yurii P. Zaykov

Authors
  1. Yurii P. Zaykov
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  2. Sergey I. Zhuk
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  3. Andrey V. Isakov
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  4. Olga V. Grishenkova
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  5. Vladimir A. Isaev
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Correspondence to Vladimir A. Isaev.

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Zaykov, Y.P., Zhuk, S.I., Isakov, A.V. et al. Electrochemical nucleation and growth of silicon in the KF-KCl-K2SiF6 melt. J Solid State Electrochem 19, 1341–1345 (2015). https://doi.org/10.1007/s10008-014-2729-z

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  • DOI: https://doi.org/10.1007/s10008-014-2729-z

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